Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Thi

BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to KTA1273  High Current Application  Surface Mount device MECHANICAL DATA  Case: SOT-89  Case

REPLACEMENT TYPE : BST39.BST40 FEATURES  Low Current  High Voltage HEBST39.40(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless ot

Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit

SCHOTTKY BARRIER DIODE 1N5711W FEATURES  Low Forward Voltage  Fast Switching Time  Low Reverse Capacitance  Small Surface Mount device  PN Junc

Plastic-Encapsulate Mosfets FEATURES The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit

BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to NPN 2SD313  Low Collector-Emitter Saturation Voltage MECHANICALDATA  Case:TO-220  Case Materia

FEATURES  Glass Passivated Die Construction  Low reverse leakage  Low Forward Voltage Drop and High Current Capability  Ideally Suited for Automat

FEATURES  Glass Passivated Die Construction  Low reverse leakage  Low Forward Voltage Drop and High Current Capability  Ideally Suited for Automat

REPLACEMENT TYPE : MMBTA05 FEATURES  Driver Transistor HABTA05(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

REPLACEMENT TYPE : 2SC2411 FEATURES  High ICMax.ICMax.=0.5mA  Low VCE(sat).Optimal For Low Voltage Operation  Complements The HAA1036 MAXIMUM RATI

REPLACEMENT TYPE : MMBT2222 FEATURES  Genernal Purpose Amplifier HABT2222(NPN) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise not

FEATURES  Glass Passivated Die Construction  Super-Fast Recovery Time For High Efficiency  Low Forward Voltage Drop and High Current Capability  I

Features • Total power dissipation : max. 300 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% Absolute M

Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE FEATURES or use in low voltage, high frequency inverters Free wheeling, and polarity protection app

BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to KTA1273  High Current Application  Surface Mount device MECHANICAL DATA  Case: SOT-89  Case

Plastic-Encapsulate Mosfets Dual N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 20V ID = 7A RDS(ON) < 26mΩ (VGS = 4.5V) RDS(O

FEATURES • High Voltage • Complement to BC546,BC547,BC548 Plastic-Encapsulate Transistors BC556/BC557/BC558 (PNP) Maximum Ratings (Ta=25 unless othe

FEATURES  Glass Passivated Die Construction  Low reverse leakage  Low Forward Voltage Drop and High Current Capability  Ideally Suited for Automat