Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Thi

BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to KTA1273  High Current Application  Surface Mount device MECHANICAL DATA  Case: SOT-89  Case

SCHOTTKY BARRIER DIODE 1N5711W FEATURES  Low Forward Voltage  Fast Switching Time  Low Reverse Capacitance  Small Surface Mount device  PN Junc

REPLACEMENT TYPE : BST39.BST40 FEATURES  Low Current  High Voltage HEBST39.40(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless ot

REPLACEMENT TYPE : 2SC2411 FEATURES  High ICMax.ICMax.=0.5mA  Low VCE(sat).Optimal For Low Voltage Operation  Complements The HAA1036 MAXIMUM RATI

HABT3906(PNP) REPLACEMENT TYPE :MMBT3906 SWITCHING TRANSISTOR FEATURES  PNP Silicon Epitaxial Planar Transistor  for switching and amplifier appl

Plastic-Encapsulate Mosfets FEATURES The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit

Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit

BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to NPN 2SD313  Low Collector-Emitter Saturation Voltage MECHANICALDATA  Case:TO-220  Case Materia

Features • Total power dissipation : max. 300 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% Absolute M

BRIDGE RECTIFIER ABS205-ABS210 ~ FEATURES  Low reverse voltage leakage current  Glass passivated die construction  Low forward voltage drop  Hi

BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to KTA1273  High Current Application  Surface Mount device MECHANICAL DATA  Case: SOT-89  Case

FEATURES  Glass Passivated Die Construction  Low reverse leakage  Low Forward Voltage Drop and High Current Capability  Ideally Suited for Automat

Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell den

BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to NPN 2SD313  Low Collector-Emitter Saturation Voltage MECHANICALDATA  Case:TO-220  Case Materia

FEATURES • High Voltage • Complement to BC546,BC547,BC548 Plastic-Encapsulate Transistors BC556/BC557/BC558 (PNP) Maximum Ratings (Ta=25 unless othe

FEATURES  Glass Passivated Die Construction  Low reverse leakage  Low Forward Voltage Drop and High Current Capability  Ideally Suited for Automat

BRIDGE RECTIFIER ABS205-ABS210 ~ FEATURES  Low reverse voltage leakage current  Glass passivated die construction  Low forward voltage drop  Hi

BRIDGE RECTIFIER ABS205-ABS210 ~ FEATURES  Low reverse voltage leakage current  Glass passivated die construction  Low forward voltage drop  Hi