| Part Number | Description | Manufacture |
|---|---|---|
|
|
FX1S / FX1N / FX2N / FX2NC |
 Mitsubishi |
|
|
STP2NC60FP urce Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature |
 ST Microelectronics |
|
|
STW12NC60 TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 12 8 18 190 1.52 3 –65 to 150 150 (1)ISD ≤11A, di/dt ≤100A/ |
 STMicroelectronics |
|
|
Phase Control Thyristor |
 WESTCODE |
|
|
Pulse Thyristor |
 IXYS |
|
|
Fast Recovery Diode |
IXYS |
|
|
N-Channel MOSFET ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ New high voltage benchmark Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established |
STMicroelectronics |
|
|
Soft Recovery Diode |
IXYS |
|
|
N-CHANNEL MOSFET C45 Q1NC45 PACKAGE IPAK TO-92 TO-92 PACKAGING TUBE BULK AMMOPAK June 2003 1/11 STD2NC45-1, STQ1NC45 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter STD2NC45-1 Value STQ1NC45 Unit V V V 0.5 0.315 2 3.1 |
ST Microelectronics |
|
|
2M-BIT [256K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 262,411 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 70/90ns • Low power consumption - 20mA maximum active current - 0.2uA |
 Macronix International |
| Total 99 results |
