GS-065-011-6-L Datasheet | Specifications & PDF Download

Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ •

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GS-065-011-1-L 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • B

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Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 125 mΩ •

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Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 12

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