
GS-065-008-6-L - 700V E-mode GaN transistor
Features
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 16
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Features • 650 V enhancement mode power transist.
GS-065-008-1-L Distributor