GENERAL Datasheet | Specifications & PDF Download

1N4728 THRU 1N4764 ZENER DIODES FEATURES DO-41 Glass ♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high pow

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1N4001 - 1N4007 — General-Purpose Rectifiers November 2014 1N4001 - 1N4007 General-Purpose Rectifiers Features • Low Forward Voltage Drop • High Su

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RF3396General Purpose Amplifier RF3396 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: QFN, 12-Pin, 3 x 3 Features „ DC

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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UA741 General-purpose single operational amplifier N DIP8 (plastic package) D SO8 (plastic micropackage) Pin connections (top view) 1 - Offset null

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GPM8F3o1n32/3116/3108A 3424/l1Pp6ilnu/88K-BbitFMlaOischrnolcyontroller with G F Preliminary Oct. 21, 2010 Version 0.3 Generalplus Technology Inc. rese

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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GENERAL PURPOSE RECTIFIER RoHS 1N5391 (G) Thru 1N5399 (G) 1.5A DIA FEATURES • 1.5 amps, 50 to 1000V • Available with glass passivated chip junction,

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S9014 NPN General Purpose Transistors TO-92 www.DataSheet4U.com 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating

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Copyrighted material licensed to Fermi National Laboratory by Thomson Scientific, Inc. (www.techstreet.com). This copy downloaded on 2015-05-12 15:14:

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MITSUBISHI DIODE MODULES RM50TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM50TC-M,-H,-24,-2H • IO • VRRM DC output current

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UTC PN2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP General Purpose Amplifier FEATURES This device is designed for use as a general purpose amplifier an

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RMC Series — General Purpose Thick Film Chip Resistors Features www.DataSheet4U.com • Nickel barrier terminations standard • Zero ohm available (max

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Features ⚫ Supply Voltage: 3V to 36V ⚫ Low Supply Current: 100μA per channel ⚫ Input Common-Mode Voltage Range Includes Ground ⚫ Can Work as Comparato

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DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BAV100 to BAV103 General purpose diodes Product specification Supersedes data of Apri

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__ Microwave Thick Film Disc Resistors _ MECHANICAL SPECIFICATIONS Substrate: Std. Tolerance: Terminals: Temperature Range: Beryllium Oxide Ceramic St

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NPN General Purpose Transistor: BC846/847/848 Features: t
High current gain t
Excellent hFE linearity t
Low noise between 30Hz and 15kHz t
For AF inpu

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DZ23 Series Dual Common-Cathode Zener Diodes VZ Range 2.7 to 51V Power Dissipation 300mW TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.

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