SH8601A (SHENGHE)
480RGB x 480 / 16.7M color AMOLED Display Driver
SHENGHE TECHNOLOGY
SH8601A
480RGBx480 / 16.7M color AMOLED Display Driver IC
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Datasheet
User Command Set Preliminary Vers
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F59L1G81A (Elite Semiconductor)
1 Gbit (128M x 8) 3.3V NAND Flash Memory
ESMT
Flash
FEATURES
z Voltage Supply: 2.6V ~ 3.6V z Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic
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F50L1G41A (Elite Semiconductor)
3.3V 1 Gbit SPI-NAND Flash Memory
ESMT
Flash
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim
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MG200H1AL2 (Toshiba Semiconductor)
IGBT
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
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F59D1G161A (Elite Semiconductor)
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
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F59D2G81A (Elite Semiconductor)
2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
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KPM-1201A8 (Ningbo)
Buzzer
Magnetic Transducer (without driving circuit) KPM-1201A series Magnetic Buzzer
DIMENSIONS
35
FREQUENCY RESPONSE
[actual curve of type]
applied vol
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F59D2G161A (Elite Semiconductor)
2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
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12 views
FYL-3014IRAC1A (Ningbo Foryard)
LED
FYL-3014IRAC1A
Features:
General purpose leads RoHs complant.
Descriptions:
Dice material: AlGaAs Emitting Color: Infrared Device Outline: Φ3mm Round
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MT29F4G01AAADD (Micron)
4Gb x1: SPI NAND Flash Memory
Micron Confidential and Proprietary
Advance‡
NAND Flash Memory
Serial Peripheral Interface (SPI) MT29F4G01AAADD
4Gb x1: SPI NAND Flash Memory Featu
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SKiiP11AC126V10 (Semikron)
IGBT
SKiiP 11AC126V10
MiniSKiiP® 1 3-phase bridge inverter
Absolute Maximum Ratings
Symbol Conditions
IGBT - Inverter
(. 3 . .:1 ( 3
0 # 7859 2
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GBJ2001A (Yangzhou Yangjie)
Bridge Rectifier
GBJ20005A THRU GBJ2010A
RoHS
COMPLIANT
Bridge Rectifiers
Features
● UL recognition, file #E230084 ● Glass passivated chip junction ● Thin single in-
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11 views
MT29F1G01AAADD (Micron Technology)
1Gb x1: SPI NAND Flash Memory
Micron Confidential and Proprietary
Advance‡
1Gb x1: SPI NAND Flash Memory Features
NAND Flash Memory
Serial Peripheral Interface (SPI) MT29F1G01AA
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10 views
F59L2G81A (Elite Semiconductor)
2 Gbit (256M x 8) 3.3V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization
- Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit A
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GBP201A (Yangzhou Yangjie)
Bridge Rectifier
GBP2005A THRU GBP210A
RoHS
COMPLIANT
Bridge Rectifiers
Features
● UL recognition, file #E230084 ● Glass passivated chip junction ● Ideal for printed
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10 views
GBU2501A (Yangzhou Yangjie)
Bridge Rectifier
GBU25005A THRU GBU2510A
RoHS
COMPLIANT
Bridge Rectifiers
Features
● UL recognition, file #E230084 ● Glass passivated chip junction ● Ideal for print
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10 views
GBJ3501A (Yangzhou Yangjie)
Bridge Rectifier
GBJ35005A THRU GBJ3510A
RoHS
COMPLIANT
Bridge Rectifiers
Features
● UL recognition, file #E230084 ● Glass passivated chip junction ● Thin single in
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10 views
FS1GB (CITC)
1A Surface Mount Fast Rectifiers
FS1AB THRU FS1MB
1A Surface Mount Fast Rectifiers
■ Features
• Low profile surface mounted application in order to optimize board space.
• High curre
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FYL-3014IRBT1A (Ningbo Foryard)
LED
FYL-3014IRBT1A
Features:
Single color High Power output Low power consumption High reliability and long life. General purpose leads RoHs complant.
Des
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FYL-3014IRAT1A (Ningbo Foryard)
LED
FYL-3014IRAT1A
Features:
General purpose leads RoHs complant.
Descriptions:
Dice material: AlGaAs Emitting Color: Infrared Device Outline: Φ3mm Round
Published:
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9 views