ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

ESMT Flash FEATURES z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic

SHENGHE TECHNOLOGY SH8601A 480RGBx480 / 16.7M color AMOLED Display Driver IC InfiCnointfriudeenotnilayl Datasheet User Command Set Preliminary Vers

ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V ~ 3.6V)  Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit  A

ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V ~ 3.6V)  Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit  A

Micron Confidential and Proprietary Advance‡ NAND Flash Memory Serial Peripheral Interface (SPI) MT29F4G01AAADD 4Gb x1: SPI NAND Flash Memory Featu

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi