SH8601A (SHENGHE)
480RGB x 480 / 16.7M color AMOLED Display Driver
SHENGHE TECHNOLOGY
SH8601A
480RGBx480 / 16.7M color AMOLED Display Driver IC
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Datasheet
User Command Set Preliminary Vers
(10 views)
F59L1G81A (Elite Semiconductor)
1 Gbit (128M x 8) 3.3V NAND Flash Memory
ESMT
Flash
FEATURES
z Voltage Supply: 2.6V ~ 3.6V z Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic
(9 views)
F50L1G41A (Elite Semiconductor)
3.3V 1 Gbit SPI-NAND Flash Memory
ESMT
Flash
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim
(8 views)
MT29F4G01AAADD (Micron)
4Gb x1: SPI NAND Flash Memory
Micron Confidential and Proprietary
Advance‡
NAND Flash Memory
Serial Peripheral Interface (SPI) MT29F4G01AAADD
4Gb x1: SPI NAND Flash Memory Featu
(7 views)
MT29F1G01AAADD (Micron Technology)
1Gb x1: SPI NAND Flash Memory
Micron Confidential and Proprietary
Advance‡
1Gb x1: SPI NAND Flash Memory Features
NAND Flash Memory
Serial Peripheral Interface (SPI) MT29F1G01AA
(6 views)
GB-1A (GOLDEN RELAYS)
Subminiature Signal Relay
GB Products
R
C
US
Subminiature Signal Relay
Features
● 3A switching capability ● Standard PCB layout ● High sensitive:200mW ● High reliablity c
(6 views)
GBJ3501A (Yangzhou Yangjie)
Bridge Rectifier
GBJ35005A THRU GBJ3510A
RoHS
COMPLIANT
Bridge Rectifiers
Features
● UL recognition, file #E230084 ● Glass passivated chip junction ● Thin single in
(6 views)
GBU1A (Fairchild Semiconductor)
1.0 Ampere Glass Passivated Rectifier
GF1A-GF1M
GF1A - GF1M
Features • • • •
Low forward voltage drop. High current capability. Easy pick and place. High surge current capability.
3.93 3.
(5 views)
MG200H1AL2 (Toshiba Semiconductor)
IGBT
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
(5 views)
PCF1A6R8MCL1GB (Nichicon)
ALUMINUM ELECTROLYTIC CAPACITORS
CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS
CF Chip Type, Standard series
Ultra-low ESR, High ripple current. Load life of 2000 hours a
(5 views)
F59D1G161A (Elite Semiconductor)
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
(5 views)
SN-NE2121ADXBRGB-N (ETC)
RGB LED
A/0
SPECIFICATION FOR APPROVAL
Customer :
Customer Part No:
SHINING Part No:
SN-NE2121ADXBRGB-N
Emitted color:
RGB
Date 2022.3.17
Revision Hi
(5 views)
GBU2501A (Yangzhou Yangjie)
Bridge Rectifier
GBU25005A THRU GBU2510A
RoHS
COMPLIANT
Bridge Rectifiers
Features
● UL recognition, file #E230084 ● Glass passivated chip junction ● Ideal for print
(5 views)
GB201A (Digitron Semiconductors)
SILICON CONTROLLED RECTIFIERS
GA200-GA201A
High-reliability discrete products and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES Available as “HR” (hig
(4 views)
BSM121AR (Siemens Semiconductor Group)
IGBT
SIMOPAC® Module
BSM 121 AR
VDS = 200 V ID = 130 A R DS(on) = 20 mΩ
q q q q q q
Power module Single switch N channel Enhancement mode Package with i
(4 views)
M391A2K43BB1 (Samsung)
288pin Unbuffered DIMM based on 8Gb B-die
Rev. 1.3, May. 2015 M378A1K43BB1 M378A2K43BB1 M391A2K43BB1
288pin Unbuffered DIMM based on 8Gb B-die
78FBGA with Lead-Free & Halogen-Free (RoHS compli
(4 views)
FYL-3014IRAC1A (Ningbo Foryard)
LED
FYL-3014IRAC1A
Features:
General purpose leads RoHs complant.
Descriptions:
Dice material: AlGaAs Emitting Color: Infrared Device Outline: Φ3mm Round
(4 views)
FYL-3014IRAT1A (Ningbo Foryard)
LED
FYL-3014IRAT1A
Features:
General purpose leads RoHs complant.
Descriptions:
Dice material: AlGaAs Emitting Color: Infrared Device Outline: Φ3mm Round
(4 views)
K9LCG08U1A (Samsung)
32Gb A-die NAND Flash
www.DataSheet4U.net
Rev.1.0, May. 2010 K9GBG08U0A K9LCG08U1A K9HDG08U5A
32Gb A-die NAND Flash
Multi-Level-Cell (2bit/cell)
datasheet
SAMSUNG ELECTR
(4 views)
NGP15N41ACL (ON Semiconductor)
Ignition IGBT
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL
Ignition IGBT 15 A, 410 V
N−Channel DPAK, D2PAK and TO−220
This Logic Leve
(4 views)