GB-1A Datasheet | Specifications & PDF Download

CXK77B3611AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3611AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM o

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

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EiceDRIVER™ gate driver 1EDI3051AS Single channel isolated IGBT/SiC-MOSFET driver Features • Single channel isolated IGBT/SiC driver using coreless t

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

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Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y (x = D or V, y = A, B or C) NCx57080y, NCx57081y are high−current single channel IG

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NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr

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NINGBO FORYARD OPTO ELECTRONICS CO.,LTD. LED DIGIT DISPLAY PartNO.: FYS-5611A/BXX-XX DESCRIPTION  14.20mm (0.56”)Single digit numeric display series.

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GBJ35005A THRU GBJ3510A RoHS COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E230084 ● Glass passivated chip junction ● Thin single in

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NINGBO FORYARD OPTO ELECTRONICS CO.,LTD. LED DIGIT DISPLAY PartNO.: FYS-5611AX/BX-XX DESCRIPTION  14.20mm (0.56”)Single digit numeric display series.

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DATA SHEET www.DataSheet4U.com 4GB Registered DDR2 SDRAM DIMM EBE41AE4ABHA (512M words × 72 bits, 2 Ranks) Specifications • Density: 4GB • Organizat

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PRELIMINARY DATA SHEET www.DataSheet4U.com 4GB VLP Registered DDR2 SDRAM DIMM EBE41AF4A1QA (512M words × 72 bits, 2 Ranks) Specifications • Density:

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ESMT Flash FEATURES z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic

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ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V ~ 3.6V)  Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit  A

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DATA SHEET www.DataSheet4U.com 4GB Registered DDR2 SDRAM DIMM EBE41AE4ACFA (512M words × 72 bits, 2 Ranks) Specifications • Density: 4GB • Organizat

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GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi

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GBP2005A THRU GBP210A RoHS COMPLIANT Bridge Rectifiers Features ● UL recognition, file #E230084 ● Glass passivated chip junction ● Ideal for printed

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FYL-3014IRCC1A Features: Single color High Power output Low power consumption High reliability and long life. General purpose leads RoHs complant. Des

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FYL-3014IRAC1A Features: General purpose leads RoHs complant. Descriptions: Dice material: AlGaAs Emitting Color: Infrared Device Outline: Φ3mm Round

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PRELIMINARY DATA SHEET www.DataSheet4U.com 4GB VLP Registered DDR2 SDRAM DIMM EBE41AF4A1QB (512M words × 72 bits, 2 Ranks) Specifications • Density:

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