F59D1G161A (Elite Semiconductor)
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
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39 views
F59L1G81A (Elite Semiconductor)
1 Gbit (128M x 8) 3.3V NAND Flash Memory
ESMT
Flash
FEATURES
z Voltage Supply: 2.6V ~ 3.6V z Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic
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37 views
F59D2G81A (Elite Semiconductor)
2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
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36 views
SH8601A (SHENGHE)
480RGB x 480 / 16.7M color AMOLED Display Driver
SHENGHE TECHNOLOGY
SH8601A
480RGBx480 / 16.7M color AMOLED Display Driver IC
InfiCnointfriudeenotnilayl
Datasheet
User Command Set Preliminary Vers
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34 views
F50L1G41A (Elite Semiconductor)
3.3V 1 Gbit SPI-NAND Flash Memory
ESMT
Flash
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim
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31 views
F59L2G81A (Elite Semiconductor)
2 Gbit (256M x 8) 3.3V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization
- Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit A
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31 views
F59L4G81A (Elite Semiconductor)
4 Gbit (512M x 8) 3.3V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization
- Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit A
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29 views
GBP201A (Yangzhou Yangjie)
Bridge Rectifier
GBP2005A THRU GBP210A
RoHS
COMPLIANT
Bridge Rectifiers
Features
● UL recognition, file #E230084 ● Glass passivated chip junction ● Ideal for printed
Published:
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29 views
F59D2G161A (Elite Semiconductor)
2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
Published:
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28 views
MT29F1G01AAADD (Micron Technology)
1Gb x1: SPI NAND Flash Memory
Micron Confidential and Proprietary
Advance‡
1Gb x1: SPI NAND Flash Memory Features
NAND Flash Memory
Serial Peripheral Interface (SPI) MT29F1G01AA
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27 views
F59D4G161A (Elite Semiconductor)
4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization
x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
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25 views
MG200H1AL2 (Toshiba Semiconductor)
IGBT
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
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23 views
AS4C64M16D1A-6BIN (Alliance Semiconductor)
1Gb SDRAM
AS4C64M16D1A
Revision History 1Gb SDRAM-AS4C64M16D1A - 66pin TSOP II / 60ball FBGA PACKAGE
Revision Details Rev 1.0 Datasheet Rev 1.1 Add
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23 views
MT29F4G01AAADD (Micron)
4Gb x1: SPI NAND Flash Memory
Micron Confidential and Proprietary
Advance‡
NAND Flash Memory
Serial Peripheral Interface (SPI) MT29F4G01AAADD
4Gb x1: SPI NAND Flash Memory Featu
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22 views
FS1GB (CITC)
1A Surface Mount Fast Rectifiers
FS1AB THRU FS1MB
1A Surface Mount Fast Rectifiers
■ Features
• Low profile surface mounted application in order to optimize board space.
• High curre
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21 views
F59D1G81A (Elite Semiconductor)
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi
Published:
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21 views
PM50RL1A060 (Powerex)
Three Phase IGBT Inverter + Brake
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
PM50RL1A060
Intellimod™ L1-Series
Three Phase IGBT Invert
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21 views
NGD8201AN (ON Semiconductor)
Ignition IGBT
NGD8201N, NGD8201AN
Ignition IGBT
20 A, 400 V, N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitr
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20 views
GBU2501A (Yangzhou Yangjie)
Bridge Rectifier
GBU25005A THRU GBU2510A
RoHS
COMPLIANT
Bridge Rectifiers
Features
● UL recognition, file #E230084 ● Glass passivated chip junction ● Ideal for print
Published:
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20 views
TEA5101A (ST Microelectronics)
RGB HIGH VOLTAGE VIDEO AMPLIFIER
TEA5101A
RGB HIGH VOLTAGE VIDEO AMPLIFIER
. . . . . .
BANDWIDTH : 10MHz TYPICAL RISE AND FALL TIME : 50ns TYPICAL CRT CATHODES CURRENT OUTPUTS FOR P
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19 views
