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http://www.fujielectric.com/products/semiconductor/ 6MBP30VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 30A / IPM Features Low-side IGBTs a

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ESAD83-004 (30A) (40V / 30A ) SCHOTTKY BARRIER DIODE Features Low VF Super high speed switching High reliability by planer design Outline drawings,

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http://www.fujielectric.com/products/semiconductor/ 6MBP15VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 15A / IPM Features Low-side IGBTs a

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This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,le

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FA5502P/M Quality is our message FUJI Power Supply Control IC Power Factor Correction FA5502P/M Application Note June `02 Fuji Electric Co., Ltd. Ma

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6MBP50XBA120-50 IGBT Module (X series) 1200V / 50A / IPM ■ Features ・Temperature protection provided by directly detecting the junction temperature of

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YG972S6R (Io 10A / 600V) [200510] Super LLD II (For PFC circut) (current discontinuous mode) Outline drawings, mm TO-220F LOW LOSS SUPER HIGH SPEE

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FGW75XS65C Discrete IGBT (XS-series) 650V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness Applications U

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7MBR35SB120 IGBT MODULE (S series) 1200V / 35A / PIM IGBT Modules Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bri

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FMP20N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1

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FA13842,13843,13844,13845 s Description The FA1384X series are CMOS current mode control ICs for off-line and DC-to-DC converters. These ICs can reduc

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2SK1983-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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2SK2098-01MR N-CHANNEL SILICON POWER MOSFET Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconduct

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2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MO

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SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI450U4E-120 Spec. No. : MS5F 6057 Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada

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