Fuji Electric 2SK Datasheet | Specifications & PDF Download

2SK2873-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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www.DataSheet4U.com PRELIM INARY 2SK3683-01MR (500V/0.38Ω/19A) 1) Package Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current G

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2SK3683-01MR FUJI POWER MOSFET Super FAP-G Series 200309 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanch

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2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No

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2SK2226-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel

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www.DataSheet4U.com 2SK3646-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breado

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2SK2071-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara

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2SK2148-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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2SK2249-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel

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2SK2755-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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2SK2757-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante

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