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Fairchild Semiconductor FDR Datasheet

Fairchild Semiconductor FDR

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Fairchild Semiconductor

FDR8508P - P-Channel MOSFET

 · 4 Hits • -3.0 A, -30 V. • • • • RDS(ON) = 0.052Ω @ VGS = -10V RDS(ON) = 0.086Ω @ VGS = -4.5V. Low gate charge. (8nC typical). High performance trench techn...
Fairchild Semiconductor

FDR8321L - P-Channel MOSFET

 · 3 Hits a small N-Channel MOSFET (Q1) together with a large P-Channel power MOSFET (Q2) in a single SuperSOTTM-8 package. Features VDROP = 0.2V @ VIN= 5V, IL...
Fairchild Semiconductor

FDR836P - P-Channel MOSFET

 · 3 Hits • -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V RDS(ON) = 0.040 W @ VGS = -2.5 V • • High density cell design for extremely low RDS(ON). Small foo...
Fairchild Semiconductor

FDR840P - P-Channel MOSFET

 · 3 Hits • –10 A, –20 V. RDS(ON) = 0.011 Ω @ VGS = –4.5 V RDS(ON) = 0.016 Ω @ VGS = –2.5 V • Fast switching speed. • High performance trench technology for ext...
Fairchild Semiconductor

FDR8305N - N-Channel MOSFET

 · 2 Hits • 4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.5 V. • • • • Low gate charge (16.2nC typical). Fast switching speed. High...
Fairchild Semiconductor

FDR838P - P-Channel MOSFET

 · 2 Hits • • • • • -8 A, -20 V. RDS(ON) = 0.017 Ω @ VGS = -4.5 V RDS(ON) = 0.024 Ω @ VGS = -2.5 V Low gate charge (30nC typical). Fast switching speed. High pe...
Fairchild Semiconductor

FDR856P - P-Channel MOSFET

 · 2 Hits - 6.3 A, -30 V, RDS(ON) =0.025 Ω @ VGS = -10 V RDS(ON) =0.040 Ω @ VGS = -4.5 V. SuperSOTTM-8 package: small footprint (40% less than SO-8);low profile...
Fairchild Semiconductor

FDR4410 - N-Channel MOSFET

 · 1 Hits 9.3 A, 30 V. RDS(ON) = 0.013 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). Proprietary SuperSOTT...
Fairchild Semiconductor

FDR4420A - N-Channel MOSFET

 · 1 Hits 11 A, 30 V. RDS(ON) = 0.009 Ω @ VGS = 10 V, RDS(ON) = 0.013 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge. Small footprint 38% smaller than a...
Fairchild Semiconductor

FDR6580 - N-Channel MOSFET

 · 1 Hits • • • • 11 A, 20 V. RDS(ON) = 0.009 Ω @ VGS = 4.5 V RDS(ON) = 0.013 Ω @ VGS = 2.5 V. Low gate charge. High performance trench technology for extremely...
Fairchild Semiconductor

FDR6674A - N-Channel MOSFET

 · 1 Hits • 11.5 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8.5 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High pow...
Fairchild Semiconductor

FDR6678A - N-Channel MOSFET

 · 1 Hits • 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5V RDS(ON) = 20 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • Fast switch...
Fairchild Semiconductor

FDR8308P - P-Channel MOSFET

 · 1 Hits -3.2 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V, RDS(ON) = 0.070 Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology ...
Fairchild Semiconductor

FDR842P - P-Channel MOSFET

 · 1 Hits • –11 A, –12 V RDS(ON) = 9 mΩ @ VGS = –4.5 V RDS(ON) = 12 mΩ @ VGS = –2.5 V RDS(ON) = 16 mΩ @ VGS = –1.8 V • Fast switching speed • High performance t...
Fairchild Semiconductor

FDR844P - P-Channel MOSFET

 · 1 Hits • –10 A, –20 V. RDS(ON) = 11 mΩ RDS(ON) = 14 mΩ RDS(ON) = 20 mΩ • Fast switching speed • High performance trench technology for extremely low RDS(ON) ...
Fairchild Semiconductor

FDR8521L - P-Channel MOSFET

 · 1 Hits a small N-Channel MOSFET (Q1) together with a large P-Channel Power MOSFET (Q2) in a single SO-8 package. Features •V V DROP DROP = 0.07 V @ V = 12 ...
Fairchild Semiconductor

FDR858P - P-Channel MOSFET

 · 1 Hits -8 A, -30 V. RDS(ON) = 0.019 Ω @ VGS = -10 V, RDS(ON) = 0.028 Ω @ VGS = -4.5 V. Low gate charge (21nC typical). High performance trench technology for...
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