Fairchild Semiconductor FDB Datasheet | Specifications & PDF Download

FDB8447L 40V N-Channel PowerTrench® MOSFET February 2007 FDB8447L 40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ Features General Description Thi

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FDBL86361_F085 N-Channel PowerTrench® MOSFET FDBL86361_F085 N-Channel PowerTrench® MOSFET 80 V, 300 A, 1.4 mΩ December 2014 Features „ Typical RDS(

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FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.),

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FDP4020P February 1999 PRELIMINARY FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This P-Ch

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July 1998 FDP6670AL/FDB6670AL N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed spec

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FDB3502 N-Channel Power Trench® MOSFET May 2008 FDB3502 N-Channel Power Trench® MOSFET 75V, 14A, 47mΩ tm Features General Description „ Max rDS(

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FDBL0330N80 N-Channel PowerTrench® MOSFET FDBL0330N80 N-Channel PowerTrench® MOSFET 80 V, 220 A, 3.0 mΩ April 2015 Features „ Typical RDS(on) = 2.4

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FDBL0210N80 N-Channel PowerTrench® MOSFET FDBL0210N80 N-Channel PowerTrench® MOSFET 80 V, 240 A, 2.0 mΩ April 2015 Features „ Typical RDS(on) = 1.5

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FDB12N50TM — N-Channel UniFETTM MOSFET FDB12N50TM N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 m Features • RDS(on) = 550 m (Typ.) @ VGS = 10 V, ID

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FDBL9403_F085 N-Channel PowerTrench® MOSFET FDBL9403_F085 N-Channel PowerTrench® MOSFET 40 V, 240 A, 0.9 mΩ May 2014 Features „ Typical RDS(on) = 0

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FDP6030BL/FDB6030BL July 2000 FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET ha

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FDP6030L/FDB6030L August 2003 FDP6030L/FDB6030L N-Channel Logic Level PowerTrenchΝ MOSFET General Description This N-Channel Logic Level MOSFET has

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July 1998 FDP6035AL/FDB6035AL N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed spec

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FDB8870 May 2008 FDB8870 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9mΩ General Description This N-Channel MOSFET has been designed specifically to

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FDBL0090N40 N-Channel PowerTrench® MOSFET FDBL0090N40 N-Channel PowerTrench® MOSFET 40 V, 240 A, 0.9 mΩ November 2014 Features „ Typical RDS(on) =

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FDB3672 July 2004 FDB3672 N-Channel PowerTrench® MOSFET 100V, 44A, 28mΩ Features • rDS(ON) = 24mΩ (Typ.), VGS = 10V, ID = 44A • Qg(tot) = 24nC (Typ.

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FDB38N30U — N-Channel UniFETTM Ultra FRFETTM MOSFET November 2013 FDB38N30U Features •R DS(on) = N-Channel UniFETTM Ultra FRFETTM MOSFET 300 V, 38

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FDB045AN08A0 April 2002 FDB045AN08A0 N-Channel UltraFET® Trench MOSFET 75V, 80A, 4.5mΩ Features • r DS(ON) = 3.9mΩ (Typ.), V GS = 10V, ID = 80A • Qg

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FDP6021P/FDB6021P April 2001 PRELIMINARY FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel power

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April 1998 FDP6035L/FDB6035L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhanceme

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