FQD1N80 / FQU1N80 May 2001 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tran

4A, 600V, N H FQU4N60C FQD4N60C H4N60U H4N60D 4N60 HAOHAI U: TO-251 D: TO-252 4N60 Series N-Channel MOSFET 80/ 2.5K/ 4Kpc

FQD60N03L April 2004 FQD60N03L N-Channel Logic Level MOSFETs 30V, 30A, 0.023 Ω General Description This device employs advanced MOSFET technology an

FQD4N65/FQI4N65/FQU4N65 650V,4A N-Channel MOSFET General Description Product Summary The FQD4N65& FQI4N65 & FQU4N65 have been fabricated using an a

MOSFET – P-Channel, QFET) -500 V, 4.9 W, -2.1 A FQD3P50 Description This P−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s

MOSFET – N-Channel, QFET 200 V, 9.0 A, 280 mW FQD12N20L Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprieta

FQ D 60N07 60V N-Channel MOSFET General Description The FQD60N07 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Th

FQD6N40C / FQU6N40C QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistor

FQD3P50TM_F085 500V P-Channel MOSFET November 2010 FQD3P50TM_F085 500V P-Channel MOSFET General Description These P-Channel enhancement mode power f

FQD12P10TM-F085 P-Channel MOSFET FQD12P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transi

  
 
 
  
 
    
    
             

FQD4N60/FQI4N60/FQU4N60 600V,4A N-Channel MOSFET General Description Product Summary The FQD4N60 & FQI4N60 & FQU4N60 have been fabricated using an

FQD1N50B / FQU1N50B May 2000 QFET FQD1N50B / FQU1N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description These N-Channel

FQD1N60 FQU1N60 FQI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The FQD1N60 & FQU1N60 & FQI1N60 have been fabricated using a

FQD1N60C / FQU1N60C — N-Channel QFET® MOSFET www.onsemi.com FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω Features • 1 A, 600 V,

 

 
 

    
    
              

MOSFET – N-Channel, QFET 250 V, 16 A, 270 mW FQD16N25C Description This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietar

FQD2N60 / FQU2N60 April 2000 QFET FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr