| No |
Part Number |
Description |
Manufacture |
PDF |
| 36 |
FDN302P |
P-Channel 2.5V Specified PowerTrench MOSFET
FDN302P
October 2000
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench |
Fairchild Semiconductor
|
|
| 35 |
FDN304P |
P-Channel 1.8V Specified PowerTrench MOSFET
FDN304P
June 2000 PRELIMINARY
FDN304P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench proc |
Fairchild Semiconductor
|
|
| 34 |
FDN304PZ |
P-Channel 1.8V Specified PowerTrench MOSFET
FDN304PZ
March 2003
FDN304PZ
P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It ha |
Fairchild Semiconductor
|
|
| 33 |
FDN306P |
P-Channel 1.8V Specified PowerTrench MOSFET
FDN306P
December 2001
FDN306P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It |
Fairchild Semiconductor
|
|
| 32 |
FDN308P |
P-Channel 2.5V Specified PowerTrench MOSFET
FDN308P
February 2001
FDN308P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench |
Fairchild Semiconductor
|
|
| 31 |
FDN327N |
N-Channel 1.8 Vgs Specified PowerTrench MOSFET
FDN327N
October 2001
FDN327N
N-Channel 1.8 Vgs Specified PowerTrench® MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized |
Fairchild Semiconductor
|
|
| 30 |
FDN335N |
N-Channel 2.5V Specified PowerTrenchTM MOSFET
FDN335N
April 1999
FDN335N
N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench pro |
Fairchild Semiconductor
|
|
| 29 |
FDN336P |
Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
November 1998
FDN336P Single P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench pr |
Fairchild Semiconductor
|
|
| 28 |
FDN337N |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
March 1998
FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced us |
Fairchild Semiconductor
|
|
| 27 |
FDN338 |
FET
F DN338 (DMDN338P) SOT-23 場效應晶體管(SOT-23 Field Effect Transistors)
WWW.DCY-CHINA.NET
P-Channel Enhancement-Mode MOS FETs
P 沟道增强型 MOS 场效应管
■MAXIMUM RATINGS 最大額 |
DCY
|
|
| 26 |
FDN338P |
P-Channel Logic Level Enhancement Mode Field Effect Transistor
FDN338P
FDN338P
P-Channel 2.5V Specified PowerTrench® MOSFET
November 2013
General Description
This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It |
Fairchild Semiconductor
|
|
| 25 |
FDN339AN |
N-Channel 2.5V Specified PowerTrench MOSFET
FDN339AN
November 1999
FDN339AN
N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTren |
Fairchild Semiconductor
|
|
