FDN Datasheet | Specifications & PDF Download

MOSFET – N-Channel, POWERTRENCH) 150 V, 1.6 A, 261 mW FDN86246 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRE

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C1602A-YFDN-DYNC SPECIFICATION FOR APPROVAL Product Type: Character Type STN Dot Matrix LCD Module Part No.: C1602A-YFDN-DYNC Customer: Customer Pa

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FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDN338P FDN338P P-Channel 2.5V Specified PowerTrench® MOSFET November 2013 General Description This P-Channel 2.5V specified MOSFET uses Fairchild’

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MOSFET – P-Channel, POWERTRENCH®, Specified 2.5 V FDN342P General Description This P−Channel 2.5 V specified MOSFET is produced in a rugged gate versi

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MOSFET – N-Channel POWERTRENCH) 2.5 V Specified FDN339AN Description This N−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced Power

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MOSFET – N-Channel, Logic Level, Enhancement Mode FDN357N General Description SUPERSOTt−3 N−Channel logic level enhancement mode power field effect

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN352AP VDSS −30 V RDS(ON) MAX 180 mW @ −10 V 300 mW @ −4.5 V ID MAX −1.3 A −1

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MOSFET – N-Channel, 2.5 V Specified, POWERTRENCH) 20 V, 1.7 A, 100 mW FDN335N General Description This N−Channel 2.5 V specified MOSFET is produced u

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MOSFET – N-Channel, POWERTRENCH), 1.8 Vgs Specified 20 V, 2 A, 70 mW FDN327N General Description This 20 V N−Channel MOSFET uses onsemi’s high voltag

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Winstar Display Co., LTD WEB: http://www.winstar.com.tw E-mail: winstar@winstar.com.tw SPECIFICATION MODULE NO.: WF56BTIAFDNN0# General Specifi

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UMW FDN352AP -30V P-ChanneI MOSFET 1.Description These devices are well suited for low voltage and battery pow-ered applications where low in-line po

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH), Logic Level FDN340P SOT−23 CASE 527AG General Description This P−Channel Logic

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FDN335N April 1999 FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using

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FDN304PZ March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench® MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDN359BN January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using F

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MOSFET – N-Channel, Logic Level, POWERTRENCH) 60 V, 1.6 A, 98 mW FDN5632N-F085 Features • RDS(on) = 98 mW at VGS = 4.5 V, ID = 1.6 A • RDS(on) = 82 m

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MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POW

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MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN338P General Description This P−Channel 2.5 V specified MOSFET uses onsemi’s advanced low voltag

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MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN304PZ General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low volta

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