FDN Datasheet | Specifications & PDF Download

UMW FDN302P P-ChanneI MOSFET 1.Description This P-Channel 2.5V has been optimized for power management applications with a wide range of gate drive v

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UMW FDN352AP -30V P-ChanneI MOSFET 1.Description These devices are well suited for low voltage and battery pow-ered applications where low in-line po

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C1602A-YFDN-DYNC SPECIFICATION FOR APPROVAL Product Type: Character Type STN Dot Matrix LCD Module Part No.: C1602A-YFDN-DYNC Customer: Customer Pa

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MOSFET – P-Channel, 1.8 V Specified, POWERTRENCH) FDN306P General Description This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltag

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FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gat

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH), Logic Level FDN340P SOT−23 CASE 527AG General Description This P−Channel Logic

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Transistor - N-Channel, Logic Level, Enhancement Mode Field Effect FDN337N General Description SUPERSOTt−3 N−Channel logic level enhancement mode po

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March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement

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FDN304P January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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FDN306P December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s

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SMD Type P-Channel MOSFET FDN304P (KDN304P) MOSFET ■ Features ● VDS (V) =-20V ● ID =-2.4A (VGS =-4.5V) ● RDS(ON) ＜ 52mΩ (VGS =-4.5V) ● RDS(ON) ＜ 70

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN352AP VDSS −30 V RDS(ON) MAX 180 mW @ −10 V 300 mW @ −4.5 V ID MAX −1.3 A −1

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MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) FDN302P General Description This P−Channel 2.5 V specified MOSFET uses a rugged gate version of ons

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April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semi

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FDN335N April 1999 FDN335N N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using

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March 1998 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOT -3 N-Channel logic level enhancement m

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FDN86265P P-Channel PowerTrench® MOSFET May 2014 FDN86265P P-Channel PowerTrench® MOSFET -150 V, -0.8 A, 1.2 Ω Features General Description „ Max

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March 1998 FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 N-Channel logic level enhancement

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DATA SHEET www.onsemi.com MOSFET – Single, P-Channel, POWERTRENCH) FDN360P General Description This P−Channel Logic Level MOSFET is produced using on

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MOSFET – N-Channel, POWERTRENCH), Logic Level FDN359BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POW

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