FDC Datasheet | Specifications & PDF Download

FDC6330L February 1999 FDC6330L Integrated Load Switch General Description This device is particularly suited for compact power management in portab

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www.vishay.com IFDC2020CZ Vishay Dale Ferrite Power Inductor, Shielded Drum Core LINKS TO ADDITIONAL RESOURCES Product Page ELECTRICAL SPECIFICATIO

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www.vishay.com IFDC-5050HZ Vishay Dale Shielded SMD Power Inductor 12.3 mm FEATURES • 12.3 mm x 12.3 mm x 8.0 mm SMD package • Shielded ferrite co

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www.vishay.com IFDC5050JZ Vishay Dale Ferrite Power Inductor, Shielded Drum Core LINKS TO ADDITIONAL RESOURCES FEATURES • 12.5 mm x 12.5 mm x 10.0

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community FDC2212, FDC2214, FDC2112, FDC2114 SNOSCZ5A – JUNE 2015 – RE

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design FDC1004 SNOSCY5B – AUGUST 2014 – REVISED A

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FDC642P July 1999 FDC642P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced using F

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FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET December 2006 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET –20V, –4.5A, 43mΩ Featu

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Integrated Load Switch FDC6330L Description This device is particularly suited for compact power management in portable electronic equipment where 3 V

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July 1997 FDC6304P Digital FET, Dual P-Channel General Description These P-Channel enhancement mode field effect transistor are produced using Fairch

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FDC6506P February 1999 FDC6506P Dual P-Channel Logic Level PowerTrench™ MOSFET General Description These P-Channel logic level MOSFETs are produced

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• 10 WATTS OUTPUT POWER • 2:1 AND 4:1 WIDE INPUT VOLTAGE RANGE • INTERNATIONAL SAFETY STANDARD APPROVAL • SIX-SIDED CONTINUOUS SHIELD • HIGH EFFICIENC

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FDC6305N March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel low threshold 2.5V specified MOS

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FDC6302P Digital FET, Dual P-Channel General Description These Dual P-Channel logic level enhancement mode field effect transistors are produced using

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DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 60 V FDC5612 General Description This N−Channel MOSFET has been designed specifically to

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FDC6331L August 2001 FDC6331L Integrated Load Switch General Description This device is particularly suited for compact power management in portable

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