Diodes DMN Datasheet | Specifications & PDF Download

NEW PRODUCT DMN3032LE 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) max 29mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V ID TA = +

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DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capaci

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DMN1002UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVSSS 12V RSS(ON) Typ 2.36mΩ @ VGS = 3.8V IS Max TA = +25°C 24.4A Description This

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DMN2055UW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 46mΩ @ VGS = 4.5V 53mΩ @ VGS = 2.5V ID Max TA = +25°C 3.1A 2.8A

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www.DataSheet.co.kr DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.

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DMN3016LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TA = +25°C 10A 8.5A

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ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID max TA = +25°C 11.7A 10.8A

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NAEDWVAPNRCOED IUNCFTORMATION DMN3015LSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) max 15mΩ @ VGS = 10V 18mΩ

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DMN3009SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) max 5.5mΩ @ VGS = 10V 7.5mΩ @ VGS = 4.5V ID max TA = +25°C 15A

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DMN33D8LVQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 3Ω @ VGS = 4.5V 7Ω @ VGS = 2.5V ID Max TA = +25°C 350 mA

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ADVANCE INFORMATION Product Summary BVDSS 20V RDS(ON) MAX 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID MAX TA = +25°C 11.7A 10.8A Description This new

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NEW PRODUCT   Green DMN3030LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) 18mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V

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DMN2023UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V(BR)SSS RSS(ON) 24V 26mΩ @ VGS = 4.5V Package X1-WLB1818-4 IS TA = +25°C 6.

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DMN2024UDH DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 23mΩ @ VGS = 4.5V 27mΩ @ VGS = 2.5V ID Max TC = +25°C 5.2A

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ADVANCED INFORMATION DMN1008UFDF 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) Max 8mΩ @ VGS = 4.5V 12.5mΩ @ VGS = 2.5V

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NEW PRODUCT Features  Low On-Resistance  29m @VGS = 4.5V  50m @VGS = 2.5V  100m @VGS = 2.0V  Very Low Gate Threshold Voltage  Low Input Capa

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NEW PRODUCT Features • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching

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NEW PRODUC YM DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance  90mΩ @ VGS = 4.5V  110mΩ @ VGS = 2.5V  20

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NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 10.8m @ VGS = 4.5V 14.5m @ VGS = 2.5V 17.0m @ VGS = 1.8V ID max TA = +25°C 10.7A 9.3A 8.6A

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Product Summary DMNH6008SPS Green 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Features and Benefits BVDSS 60V RDS(ON) 8.0mΩ @ VGS = 1

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