Diodes 2DB Datasheet | Specifications & PDF Download

Pb Lead-free Green A Product Line of Diodes Incorporated PI2DBS32212 1.8 V, 1-to-32 Gbps 1-Lane 2:1 Mux/De-Mux Switch Features Description y 2 Dif

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2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Ty

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2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Ty

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2DB1119S PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • I

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Features • BVCEO > -50V • IC = -3A High Continuous Collector Current • ICM = -4.5A Peak Pulse Current • Epitaxial Planar Die Construction • Low Collec

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Features  BVCEO > -32V  IC = -2A high Continuous Current  Low saturation voltage VCE(sat) < 800mV @ 2A  Complementary NPN Type: 2DD1766  Totally

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2DB1132P/Q/R 32V PNP POWER SWITCHING TRANSISTOR IN SOT-89 Features  BVCEO > -32V  IC = -1A high Continuous Collector Current  Complementary NPN Ty

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Features  BVCEO > -32V  IC = -2A high Continuous Current  Low saturation voltage VCE(sat) < 800mV @ 2A  Complementary NPN Type: 2DD1766  Totally

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Features  BVCEO > -32V  IC = -2A high Continuous Current  Low saturation voltage VCE(sat) < 800mV @ 2A  Complementary NPN Type: 2DD1766  Totally

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Features  BVCEO > -32V  IC = -2A High Continuous Collector Current  ICM = -3A Peak Pulse Current  Epitaxial Planar Die Construction  Low Collecto

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2DB1713 12V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > -12V  IC = -3A High Continuous Current  Low Saturation Voltage VCE(sat) < -0.25

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2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > -20V  IC = -5A high Continuous Current  Low saturation voltage VCE(sat) < -1

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2DB1424R PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (2DD2150) • Ideall

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Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Low Power Amplification and Switching • Complement

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2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > -20V  IC = -5A high Continuous Current  Low saturation voltage VCE(sat) < -1

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NEW PRODUCT Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Ampl

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - USE FCX789A 2DB1714 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • Epitaxial

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Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideal for Low Power Amplification and Switching • Complement

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PZUxDB2 series Dual Zener diodes Rev. 01 — 31 March 2008 Product data sheet 1. Product profile 1.1 General description Dual isolated general-purpose

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PZUxDB2 series Dual Zener diodes Rev. 01 — 31 March 2008 Product data sheet 1. Product profile 1.1 General description Dual isolated general-purpose

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