Diodes DMN Datasheet | Specifications & PDF Download

AADDVVAANNCCEEDDI INFNFOORRMMAATITIOONN Product Summary BVDSS 20V RDS(ON) max 29m @ VGS = 10V 35m @ VGS = 4.5V ID max TA = +25°C 6.5A 5.4A Desc

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DMN2024UVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 24mΩ @ VGS = 4.5V 28mΩ @ VGS = 2.5V ID TA = +25°C 7A 5A Descri

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DMN2024UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V 50mΩ

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DMN2024UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 24mΩ @ VGS = 4.5V 28mΩ @ VGS = 2.5V ID Max TC = +25°C 6.2A

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DMN2004WKQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) max 550 mΩ @ VGS = 4.5V ID TC = +25°C 0.54 mA Description and Appl

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DMN95H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 1000V RDS(ON) 7Ω@VGS = 10V ID TC = +25°C 2.5A Description This ne

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMN95H2D2HCTI Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 950V RDS(ON)

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NEW PRODUCT DMN2990UDJQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ V

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DMN2024UFU DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 20.2mΩ @ VGS = 4.5V 23.5mΩ @ VGS = 2.5V ID Max TC = +25°C

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DMN2024UFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) max 22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V ID max Tc = +25°C 8A 7

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DMN2991UV N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V ID @TA = +25°C 0.7A 0.6A Descr

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NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 900V RDS(ON) 7Ω@VGS = 10V

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DMN2114SN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • Low On-Resistance Ideal for Notebook Computer, Portabl

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NEW PRODUCT YM NOT RECOMMENDED FOR NEW DESIGN USE DMN2025U DMN2230U N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  110m @ VGS =

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DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) MAX 11m @ VGS = 4.5V 20V 13mΩ @ VGS = 2.5V 30m @ VGS = 1.8V 50mΩ

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A D VNAENACWDEPVDRAIONNDCFUEOCIRTNMFAOT IROMNA T I O N DMN2010UDZ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS 24V RD

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DMN2016UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Out

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NEW PRODUCT DMN2104L N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • 53mΩ @VGS = 4.5V • 104mΩ @VGS = 2.5V • Low G

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