D669 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD669 2SD669A DESCRIPTION ·With TO-126 package ·Complement to type 2SB64

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD669 2SD669A DESCRIPTION ·With TO-126 package ·Complement to type 2SB64

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2SD669, 2SD669A Silicon NPN Epitaxial Application www.DataSheet4U.com Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126

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2SD669/2SD669A Elektronische Bauelemente NPN Type Plastic Encapsulate Transistors RoHS Compliant Product A suffix of -C specifies halogen & lead-

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2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 123 1. Emitter

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UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR  APPLICATIONS * Low frequency power ampli

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2SD669/2SD669A Elektronische Bauelemente NPN Type Plastic Encapsulate Transistors RoHS Compliant Product A suffix of -C specifies halogen & lead-

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2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2

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2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2

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UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR  APPLICATIONS * Low frequency power ampli

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2SD669AD Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package.  / Features 2SB649AD 。 Co

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HI-SINCERITY MICROELECTRONICS CORP. HSD669AT NPN Epitaxial Planar Transistor Spec. No. : H200901 Issued Date : 2009.02.20 Revised Date : Page No. : 1

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a FEATURES Complete 16-Bit D/A Function On-Chip Output Amplifier High Stability Buried Zener Reference Monolithic BiMOS II Construction ؎1 LSB Integra

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UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR  APPLICATIONS * Low frequency power ampli

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Elektronische Bauelemente 2SD669AT 1.5A, 180V NPN Plastic Encapsulated Transistor FEATURES Low frequency power amplifier RoHS Compliant Product A s

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good

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HI-SINCERITY MICROELECTRONICS CORP. HSD669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HSB649A

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FDD6690A March 2015 FDD6690A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’

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UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR  APPLICATIONS * Low frequency power ampli

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FDD6696/FDU6696 December 2002 FDD6696/FDU6696 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specific

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