Complementary NPN‐PNP Power Bipolar Transistors NJW0281G (NPN), NJW0302G (PNP) These complementary devices are lower power versions of the popular NJ

4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and swi

SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES

Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm

TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors . . . PowerBase complementary t

MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk

4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and swi

General Description The BPM0405CG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs can be

BP0405SCG 40V Complementary MOSFET Description The BP0405SCG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The co

www.DataSheet4U.com Data sheet acquired from Harris Semiconductor SCHS018C – Revised September 2003 The CD4007UB types are supplied in 14-lead hermet

TIP35C, 36C Complementary Power Transistors Designed for use in general purpose power amplifier and switching applications. Features: • Collector-Emit

Complementary Silicon High-Power Transistors 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) These PowerBase complementary transistors are designed fo

BD243C BD244C Complementary power transistors Features ■ Complementary NPN-PNP devices Applications ■ Power linear and switching Description The devi

2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−pur

Complementary Silicon Power Transistors 2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching a

2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation

Data sheet acquired from Harris Semiconductor SCHS018C – Revised September 2003 The CD4007UB types are supplied in 14-lead hermetic dual-in-line ceram