C3M0060065K Datasheet | Specifications & PDF Download

C3M0060065K Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode Drain (Pin 1, TAB) Features • 3rd Generation SiC MOSFET

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VDS C3M0060065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) N-Channel Enhancement Mode Features Package 650

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