Bruckewell 3.0 Datasheet | Specifications & PDF Download

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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KBP200 - KBP210 PRV : 50 - 1000 Volts Io : 2.0 Amperes Features • High case dielectric strength • High surge current capability • High reliability • L

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MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of f

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MBR20L45CT Product profile Dual Common-Cathode Ultra Low VF Schottky Rectifier General description Rectifiers 20 Amp 45V Features • Guard ring for ove

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MURS320B-360B ULTRAFAST RECTIFIERS Features • High reliability • Low leakage • Low forward voltage • High current capability • Ultrafast switching spe

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P6KE6.8C-600CA VBR : 6.8 - 600 Volts PPK : 600 Watts Features • Glass passivated jungtion chip • 600W surge capability at 1ms • Excellent clamping cap

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BCX51-BCX53 PNP Silicon AF Transistors Features • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage

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MB22S-210S Surface Mount Schottky Bridge Rectifiers REVERSE VOLTAGE: 20 - 100 V Features • High Temperature Soldering Guaranteed:260 C/10 Second • Sav

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SS8050 TRANSISTOR (NPN) Features • Complimentary to SS8550 • RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication

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MB005-MB010 PRV : 50 - 1000 Volts Io : 1.0 Ampere Features • High current capability • High surge current capability • High reliability • Low reverse

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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P6KE6.8C-600CA VBR : 6.8 - 600 Volts PPK : 600 Watts Features • Glass passivated jungtion chip • 600W surge capability at 1ms • Excellent clamping cap

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Preliminary Bruckewell Technology Corp., Ltd. SURFACE MOUNT BRIDGE RECTIFIER MBL06S FEATURES • High current capability • High surge current capabili

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MS23N18 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal p

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MB005-MB010 PRV : 50 - 1000 Volts Io : 1.0 Ampere Features • High current capability • High surge current capability • High reliability • Low reverse

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ESRV05-4 Low Capacitance TVS Array Description The ESRV05-4 has been specifically designed to protect sensitive compo-nents which are connected to dat

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P6KE6.8C-600CA VBR : 6.8 - 600 Volts PPK : 600 Watts Features • Glass passivated jungtion chip • 600W surge capability at 1ms • Excellent clamping cap

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P6KE6.8C-600CA VBR : 6.8 - 600 Volts PPK : 600 Watts Features • Glass passivated jungtion chip • 600W surge capability at 1ms • Excellent clamping cap

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P6KE6.8C-600CA VBR : 6.8 - 600 Volts PPK : 600 Watts Features • Glass passivated jungtion chip • 600W surge capability at 1ms • Excellent clamping cap

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MS39P93 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on

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