| No |
Part Number |
Description |
Manufacture |
PDF |
| 353 |
BUZ10 |
N - CHANNEL 50V - 0.06W - 23A TO-220 STripFET] MOSFET
®
BUZ10
N - CHANNEL 50V - 0.06Ω - 23A TO-220 STripFET™ MOSFET
T YPE BUZ 10
s s s s s
V DSS 50 V
R DS(o n) < 0.07 Ω
ID 23 A
TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVAL |
STMicroelectronics
|
|
| 352 |
BUZ10 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ 10
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 10
VDS
50 V
ID
23 A
RDS(on)
0.07 Ω
Package TO-2 |
Siemens Semiconductor Group
|
|
| 351 |
BUZ10 |
Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220
|
New Jersey Semiconductor
|
|
| 350 |
BUZ100 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
BUZ 100
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available |
Siemens Semiconductor Group
|
|
| 349 |
BUZ100L |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
BUZ 100L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO |
Siemens Semiconductor Group
|
|
| 348 |
BUZ100S |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
BUZ 100 S
SPP77N05
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
|
Siemens Semiconductor Group
|
|
| 347 |
BUZ100SL |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
BUZ 100 SL
SPP70N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin |
Siemens Semiconductor Group
|
|
| 346 |
BUZ100SL-4 |
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
Preliminary data
BUZ 100SL-4
SIPMOS ® Power Transistor
• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated
Type BUZ 100SL-4
VDS
55 V
ID
7.4 A
RDS(on)
0.02 |
Siemens Semiconductor Group
|
|
| 345 |
BUZ101 |
Power Transistor
BUZ 101
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available
Typ |
Siemens
|
|
| 344 |
BUZ101L |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
BUZ 101L
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature • also in TO-220 S |
Siemens Semiconductor Group
|
|
| 343 |
BUZ101S |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
Preliminary data
BUZ 101 S
SPP22N05
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature
Pin 1 G Type BUZ 101 S
Pin 2 |
Siemens Semiconductor Group
|
|
| 342 |
BUZ101SL |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
BUZ 101 SL
SPP20N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin |
Siemens Semiconductor Group
|
|
