BUP52 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE>20@IC= 20A ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot va

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP52 • Low VCE(SAT), Fast switching. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switch

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