www.DataSheet4U.com File No. Rev. No. : 2049 :A DEVICE SPECIFICATION Page No. TYPE POLARITY APPLICATION PACKAGE : BF194/BF195 : NPN : IF/RF Transis

MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

LEGM75BF120L5H Jan.2021 IGBT Power Module Features: • VCE=1200V IC=75A • Low VCE(sat) • VCEsat with positive temperature coefficient • Maximum junct

www.DataSheet4U.com File No. Rev. No. : 2049 :A DEVICE SPECIFICATION Page No. TYPE POLARITY APPLICATION PACKAGE : BF194/BF195 : NPN : IF/RF Transis

1200 V, 10 A 3-phase Motor Driver SAM212M10BF1 Data Sheet Description The SAM212M10BF1 is a 3-phase brushless motor driver in which output transisto

BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

Preliminary Data Sheet PD-20482 rev. B 06/99 10BF.. Series SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE SMB (DO-214AA) Major Ratings and Characteristi

BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF199/D RF Transistor NPN Silicon COLLECTOR 1 3 BASE 2 EMITTER BF199 MAXIMUM RATINGS

BF 1009 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized

SBF1040CT THRU SBF1065CT 10A High Power Schottky Barrier Rectifiers ■ Features • Low power loss, high efficiency. • High current capability, low forw

BYD Microelectronics Co., Ltd. BF1005 ON/OFF Dimming LED Driver IC General Description The BF1005 is a high performance AC/DC on/off LED driver with

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com

IMBF170R1K0M1 CoolSiC™ 1700 V SiC Trench MOSFET Final datasheet CoolSiC™ 1700 V SiC Trench MOSFET : Silicon Carbide MOSFET Features • VDSS = 1700 V

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias netwo