BF1 Datasheet | Specifications & PDF Download

www.DataSheet4U.com File No. Rev. No. : 2049 :A DEVICE SPECIFICATION Page No. TYPE POLARITY APPLICATION PACKAGE : BF194/BF195 : NPN : IF/RF Transis

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

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BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized

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www.DataSheet4U.com File No. Rev. No. : 2049 :A DEVICE SPECIFICATION Page No. TYPE POLARITY APPLICATION PACKAGE : BF194/BF195 : NPN : IF/RF Transis

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

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BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized

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DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Phi

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

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BF1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasin

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BF 1009 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF199/D RF Transistor NPN Silicon COLLECTOR 1 3 BASE 2 EMITTER BF199 MAXIMUM RATINGS

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com

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BF199 BF199 NPN RF Transistor www.DataSheet4U.com 1 TO-92 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* TC=25°C unless otherwise note

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BF1009SW Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled 3 4 input stages up to 1GHz
Operating voltage 9V
Integrated bias

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XBF10A40S-G 1.0A Fast Recovery Rectifier ■FEATURES Forward Current Reverse Recovery Time Environmentally Friendly : IF(AV)=1.0A : trr=35ns (TYP.) :

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IMBF170R650M1 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET Features  Revolutionary semiconductor material - Silicon Carbide

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1200 V, 5 A 3-phase Motor Driver SAM212M05BF1 Data Sheet Description The SAM212M05BF1 is a 3-phase brushless motor driver in which output transistor

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1200 V, 10 A 3-phase Motor Driver SAM212M10BF1 Data Sheet Description The SAM212M10BF1 is a 3-phase brushless motor driver in which output transisto

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