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BF1 Matched Datasheet

No	Part Number	Description	Manufacture	PDF
108	BF1005	Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge s	Siemens Semiconductor Group
107	BF1005	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qua	Infineon Technologies AG
106	BF1005R	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qua	Infineon Technologies AG
105	BF1005S	Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge	Siemens Semiconductor Group
104	BF1005S	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qu	Infineon Technologies AG
103	BF1005SR	Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qu	Infineon Technologies AG
102	BF1005SW	Silicon N-Channel MOSFET Tetrode BF1005S... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output	Infineon Technologies AG
101	BF1005W	Silicon N-Channel MOSFET Tetrode BF1005... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output +	Infineon Technologies AG
100	BF1009	Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network BF 1009 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electr	Siemens Semiconductor Group
99	BF1009S	Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive d	Siemens Semiconductor Group
98	BF1009S	Silicon N-Channel MOSFET Tetrode BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output	Infineon Technologies AG
97	BF1009SR	Silicon N-Channel MOSFET Tetrode BF1009S... Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output	Infineon Technologies AG

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