BDX Datasheet | Specifications & PDF Download

MC68HC05BD3D/H MC68HC05BD3 TECHNICAL DATA www.DataSheet4U.com HC05 MC68HC05BD3 MC68HC705BD3 MC68HC05BD5 TECHNICAL DATA GENERAL DESCRIPTION PIN DES

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX67C www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High curren

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDX78 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complemen

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification BDX53/A/B/C DESCRIPTION ·With TO-220C package ·High DC current gain ·DARL

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BDX33/A/B/C BDX33/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX34/34A/34B/34C r

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX35; BDX36; BDX37 NPN switching transistors Product specification Supersedes data of Sept

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX45; BDX47 PNP Darlington transistors Product specification Supersedes data of September

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amp

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDX35 www.datasheet4u.com DESCRIPTION ·With TO-126 package ·High curre

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isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -140V(Min) ·High Switching

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Transys Electronics L I M I T E D NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Powe

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NPN BDX42 – BDX43– BDX44 SILICON PLANAR DARLINGTON TRANSISTORS The BDX42, BDX43 and BDX44 are silicon NPN planar Darlington transistors and are mounte

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BDX33, 34 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C,

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SavantIC Semiconductor Silicon PNP Power Transistors Product Specification BDX34/A/B/C DESCRIPTION ·With TO-220C package ·High DC current gain ·DARL

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isc Silicon NPN Power Transistor BDX24 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min) ·Excellent Safe Operating Area ·Low C

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isc Silicon PNP Darlington Power Transistor BDX84/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining V

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isc Silicon PNP Darlington Power Transistor BDX54F DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain- : hFE= 500(Min)@ IC= -2A ·Compleme

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BDX64B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP

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BDX11 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

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