BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applicati

isc Silicon PNP Power Transistor BDX14A DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(M

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington

BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP

BDX65 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

isc Silicon NPN Darlington Power Transistor BDX33D DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain :

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Typ

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type

BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C r

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type B

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·High Current Capability ·Wide area of safe

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX53B/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for gen

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington

BDX53/A/B/C — NPN Epitaxial Silicon Transistor BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applicati

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type

NPN BDX53 – BDX53A – BDX53B – BDX53C SILICON POWER DARLINGTON TRANSISTORS The BDX53, BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN transis

NPN BDX54 – BDX54A – BDX54B – BDX54C SILICON POWER DARLINGTON TRANSISTORS The BDX54, BDX54A, BDX54B and BDX54C are silicon epitaxial-base PNP transis

NPN BDX54 – BDX54A – BDX54B – BDX54C SILICON POWER DARLINGTON TRANSISTORS The BDX54, BDX54A, BDX54B and BDX54C are silicon epitaxial-base PNP transis

isc Silicon PNP Power Transistor BDX14 DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(Mi

BDX64B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar PNP