BD895A (INCHANGE)
NPN Transistor
isc Silicon NPN Darlington Power Transistor
BD895A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min) ·High DC Current Gain
: hF
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BD895A (Power Innovations Limited)
NPN Transistor
BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
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Designed for
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BD895A (SavantIC)
SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type
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BD895A (Bourns)
NPN SILICON POWER DARLINGTONS
BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS
● Designed for Complementary Use with BD896A, BD898A and BD900A
● 70 W at 25°C Case Temperature
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