B5817W Datasheet | Specifications & PDF Download

Production specification Schottky Barrier Diode FEATURES  Extremely low VF.  Low stored change,majority carrier Conduction.  Low power loss/high e

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UNISONIC TECHNOLOGIES CO., LTD B5817W SCHOTTKY DIODE  DESCRIPTION The UTC B5817W is a schottky diode, it uses UTC’s advanced technology to provide c

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B5817W THRU B5819W 1.80(.071) 1.40(.055) SOD-123 1.65(.065) 1.55(.061) 3.86(0.152) 3.56(0.145) 2.84(0.112) 2.54(0.100) 3.9(0.154) 3.7(0.146) 2.

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B5817W-B5819W Schottky Barrier Diode + SOD-123 0.053(1.35) Max. 0.022(0.55) Typ. Min. Features - For use in low voltage, high frequency inverter

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AiT Components Inc. www.ait-components.com B5817W~B5819W SCHOTTKY DIODES SCHOTTKY BARRIER DIODE DESCRIPTION The B5817W~B5819W are available in SOD-1

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SURFACE MOUNT SCHOTTKY BARRIER DIODE B5817W thru B5819W REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 1 Ampere FEATURES • For use in low voltag

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Small Signal Product B5817W/B5818W/B5819W Taiwan Semiconductor SOD-123 40V/1A Schottky Diode FEATURES - Low Forward Voltage Drop - Surface Mounted

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low vo

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Plastic-Encapsulate Schottky Barrier Diode B5817WS THRU B5819WS Features ƹHigh Current Capability ƹLow Forward Voltage Drop Mechanical Data ƹSOD-32

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SOD-123 Plastic-Encapsulated Schottky Barrier Diode B5817W THRU B5819W Features High Current Capability Low Forward Voltage Drop P/N suffix V means

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MCC 5 Micro Commercial Components
     omponents   0DULOOD6WUHHW&KDWVZRUWK  # $ % #

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B5817W-B5819W SCHOTTKY BARRIER DIODE PRODUCT SUMMARY SOD-123 Plastic-Encapsulate Diode FEATURES For use in low voltage, high frequency inverters Free

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Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE FEATURES or use in low voltage, high frequency inverters Free wheeling, and polarity protection app

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Jingdao Microelectronics co.LTD B5817WSFL THRU B5819WSFL SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction

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AiT Semiconductor Inc. www.ait-ic.com B5817WS-B5819WS SCHOTTKY DIODE REVERSE VOLTAGE 20V TO 40V FORWARD CURRENT 1A DESCRIPTION FEATURES The B5817W

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SCHOTTKY BARRIER DIODE FEATURES For use in low

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SURFACE MOUNT SCHOTTKY BARRIER DIODE B5817WS thru B5819WS REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 1 Ampere FEATURES • For use in low volt

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Production specification Schottky Barrier Diode FEATURES  Extremely low VF.  Low stored change,majority carrier conduction.  Low power loss/high e

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Surface Mount Schottky Barrier Diodes Features: *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323

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MCC R Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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