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AON7403 - 30V P-Channel MOSFET
· 142 teristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol ...AON6426 - 30V N-Channel MOSFET
· 124 cteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 24 53 30 64 Maxi...4407A - AO4407A
· 68 Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady State Steady State Symbol RθJA RθJL Typ 32 60 17 Max 40 75 24 Units V V A...AO4614 - MOSFET
· 49 n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31m Ω (VGS=10V) < 45m Ω (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 6...D452 - N-Channel MOSFET
· 47 The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load...AO4712 - N-Channel Enhancement Mode Field Effect Transistor
· 46 VDS (V) = 30V ID =11.2A (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G www.DataS...D478 - AOD478
· 43 =70°C PDSM 2.1 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 G D S Thermal Characteristics Parameter Maximum Junction-to-Ambie...RV24AF-10-40R1-B10K - Potentiometer
· 38 F 10K 31VA403-F 25K 31VA405-F 50K 31VA501-F 100K 31VA503-F 250K 31VA505-F 500K 31VA601-F 1M 31VA602-F 2M 31VA605-F 5M 31VC205-F 500 31VJ301-F 31VC301...AON6504 - 30V N-Channel MOSFET
· 36 TSTG Maximum 30 ±20 85 66 322 51 41 60 90 36 83 33 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junct...AON6554 - 30V N-Channel MOSFET
· 35 TJ, TSTG Maximum 30 ±12 85 66 260 36 28 50 63 36 70 28 5.6 3.6 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum J...AON7406 - 30V N-Channel MOSFET
· 33 unction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction...Z1051PI - AOZ1051PI
· 32 z 4.5 V to 18 V operating input voltage range z Synchronous Buck: 70 mΩ internal high-side switch and 40 mΩ internal low-side switch (at 12 V) z Up t...AOD4184A - 40V N-Channel MOSFET
· 28 nction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 18 44 2.4 Max 2...AON6992 - 30V Dual Asymmetric N-Channel MOSFET
· 28 70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike 10µs VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Pow...AOE6936 - 30V Dual Asymmetric N-Channel MOSFET
· 26 Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike Power Dissipat...Z3015PI - AOZ3015PI
· 26 4.5 V to 18 V operating input voltage range Synchronous Buck: 85 mΩ internal high-side switch and 50 mΩ internal low-side switch (at 12 V) PEM (...AON6380 - 30V N-Channel MOSFET
· 23 0°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 24 24 88 22 17.5 60 2 36 26 10.5 ...AON6552 - N-Channel MOSFET
· 23 mJ V W W °C Avalanche energy L=0.05mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maxi...AON7380 - 30V N-Channel MOSFET
· 22 on B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 24 24 80 20 15 60 2 36 ...RV24AF-10-40R1-B100K - Potentiometer
· 20 F 10K 31VA403-F 25K 31VA405-F 50K 31VA501-F 100K 31VA503-F 250K 31VA505-F 500K 31VA601-F 1M 31VA602-F 2M 31VA605-F 5M 31VC205-F 500 31VJ301-F 31VC301...