Advanced Power Technology APT Datasheet | Specifications & PDF Download

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D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1

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APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new techno

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APT8024JLL 800V 29A 0.240W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both

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APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFE

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® 600V 30A APT30DQ60B APT30DQ60S www.DataSheet4U.com APT30DQ60BG* APT30DQ60SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RE

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APT12057B2LL(G) APT12057LLL(G) 1200V 22A 0.570Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET B2LL Power MOS 7® is a new

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APT30M75BFLL APT30M75SFLL 300V 44A 0.075Ω POWER MOS 7 R FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement m

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® 1200V 75A APT75DQ120B APT75DQ120S APT75DQ120BG* APT75DQ120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIE

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APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new t

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APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement

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www.DataSheet4U.com APTGT600DU60 Dual common source Trench + Field Stop IGBT® Power Module C1 Q1 G1 C2 Q2 G2 VCES = 600V IC = 600A* @ Tc = 80°C Appl

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Typical Performance Curves APT1001R6BFLL_SFLL APT1001R6BFLL APT1001R6SFLL 1000V 8A 1.60Ω D3PAK POWER MOS 7 ® R FREDFET TO-247 Power MOS 7 is a

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APTDF400KK60 Dual Common Cathode diodes Power Module A1 K VRRM = 600V IC = 400A @ Tc = 80°C Application • • • • Uninterruptible Power Supply (UPS) In

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APTGT150A120 Phase leg Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 VCES = 1200V IC = 150A @ Tc = 80°C Application • Welding converters • S

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APT5510JFLL 550V 44A 0.100Ω POWER MOS 7 R FREDFET G S D SOT-227 S Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancemen

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APT5020BVR 500V 26A 0.200Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technolo

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APT50M65B2FLL APT50M65LFLL 500V 67A 0.065Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhanc

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APTM50AM19F Phase leg MOSFET Power Module VDSS = 500V RDSon = 19mW max @ Tj = 25°C ID = 163A @ Tc = 25°C Application · · · · Welding converters Switch

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