Advanced Power Technology Datasheet | Specifications & PDF Download

Advanced Analog Technology, Inc. September 2016 AAT1267B Product information presented is for internal use within AAT Inc. only. Details are subjec

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Advanced Analog Technology, Inc. November 2012 AAT1176B Product information presented is for internal use within AAT Inc. only. Details are subject

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RM6204 ： ： RM6204 IC, 12W , 15W。 。RM6204 ， AC/DC 。， ， 。 ，RM6204 。 ， ， CB OC ， 。 RM6204 ，： 、、、VCC 。 RM6204 DIP-8 ， （PB FREE）。 ■700V； ■,；

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APTDF400KK60 Dual Common Cathode diodes Power Module A1 K VRRM = 600V IC = 400A @ Tc = 80°C Application • • • • Uninterruptible Power Supply (UPS) In

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APTM50DAM19 Boost chopper MOSFET Power Module VDSS = 500V RDSon = 19mW max @ Tj = 25°C ID = 163A @ Tc = 25°C Application · · · AC and DC motor control

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® 600V 30A APT30DQ60B APT30DQ60S www.DataSheet4U.com APT30DQ60BG* APT30DQ60SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RE

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APT5010JVR 500V 44A 0.100Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new

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APTGT300A170D3 Trench IGBT Power Module Phase leg ® www.datasheet4u.com VCES = 1700V IC = 300A @ Tc = 80°C Application • Welding converters • Switc

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1090MP 90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pul

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www.DataSheet4U.com UTV005P 0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION The UTV005P is a COMMON EMITTER transistor

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Advanced Analog Technology, Inc. May 2008 AAT1168/1168A/1168B Product information presented is current as of publication date. Details are subject t

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0910– 300M 300 Watts - 50 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-300M is an internally matched, COMMON BASE transistor c

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Advanced Analog Technology, Inc. Product information presented is current as of publication date. Details are subject to change without notice. April

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D TO-247 G S APT1004RBN ® 1000V 4.4A 4.00Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT10

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APT50M85B2VFR APT50M85LVFR POWER MOS V ® FREDFET B2VFR 500V 56A 0.085W Power MOS V® is a new generation of high voltage N-Channel enhancement mode p

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APT60M75JLL 600V 58A 0.075W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both

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D TO-254 G S POWER MOS IV MAXIMUM RATINGS Symbol VDSS VGS ID IDM IAR Parameter Drain-Source Voltage Gate-Source Voltage TM 2N7227 400 Volt JX2N722

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® 1000V 75A APT75DQ100B APT75DQ100S APT75DQ100BG* APT75DQ100SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIE

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® 1200V 75A APT75DQ120B APT75DQ120S APT75DQ120BG* APT75DQ120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIE

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

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