ATMEL Corporation AT4 Datasheet | Specifications & PDF Download

Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram (Erase an

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www.DataSheet4U.com Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible • Page Program Operation • • •

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Features • 1.65V - 1.95V Read/Write www.DataSheet4U.com • High Performance – Random Access Time – 70 ns – Page Mode Read Time – 20 ns – Synchronous Bu

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Features • Single 2.7V - 3.6V Supply • Sequential Access, Parallel I/O Architecture • Page Program Operation • • • • • • • • • • – Single Cycle Reprog

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Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture – RapidS™ Serial Interface: 40 MHz Maximum Clock Frequency (SPI Modes 0 and 3 Compa

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Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compatible • 20 MHz Max Clock Frequency • Page Program Operation – Single Cyc

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Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockou

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • RapidS™ Serial Interface: 66 MHz Maximum Clock Frequency – SPI Compatible Modes 0 and 3 • User

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www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Archit

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www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture – Sixty-three 32K

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Features www.DataSheet4U.com • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • •

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Features • • • • www.DataSheet4U.com Single Voltage Operation Read/Write: 2.65V - 3.6V 2.7V - 3.6V Read/Write Access Time – 70 ns Sector Erase Archite

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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Features • • • • • • • • • Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time - 110 ns Internal Program Cont

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Features • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Tim

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • • • • •

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Features • • • • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Erase/Program Contro

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Features • Single Voltage Read/Write Operation: 1.65V to 1.95V • Access Time – 80 ns • Sector Erase Architecture • • • – Sixty-three 32K Word (64K Byt

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Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • – Single Cycle Reprogram (Erase and

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