AM12 Datasheet | Pinout, Features, Price Comparison & PDF

Philips Optical Storage DATA SHEET VAM1202/12 CD mechanism for 2x Speed Product specification Version 1.1 Philips Components September 2000 Philips

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th

Product data sheet Characteristics Complementary ISO thread Detection face Detector flush mounting acceptance Front material Enclosure material Operat

TCR5AM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5AM series 500 mA CMOS Ultra Low Drop-Out Regulator The TCR5AM series are

TCR5AM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5AM series 500 mA CMOS Ultra Low Drop-Out Regulator The TCR5AM series are

Analog Power N-Channel 700-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

www.vishay.com V8PAM12 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series Top View Bottom View

www.DataSheet4U.com VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION The VAM 120 is a COMMON EMITTER device designed to

AM1280/AM2280 Datasheet AM1280/AM2280 Datasheet Description AM1280/AM2280 spectro-module is built in with the linear CCD type sensor and 8 pin externa

Philips Optical Storage DATA SHEET VAM1202/12 CD mechanism for 2x Speed Product specification Version 1.1 Philips Components September 2000 Philips

Low Noise Amplifier 1.7 - 2.0 GHz Features q q q q q q q MAAM12032 SO-8 PIN 8 .1497-.1574 (3.80-4.00) -B.2284-.2440 (5.80-6.20) .010(0.25) M B M Low

Analog Power N-Channel 650-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

NAM12S06-D DC-DC Converter Technical Manual Issue Date 1.0 2020-02-12 HUAWEI TECHNOLOGIES CO., LTD. NAM12S06-D DC-DC Converter Technical Manual A

AM1214-175 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY L

AM1214-200 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED

AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY L

AM1214-325 . . . . . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABI

AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. www.DataSheet4U.com

Analog Power N-Channel 500-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

AM1214-100 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED