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No	Part Number	Description	Manufacture	PDF
152	74VHC00	QUAD 2-INPUT NAND GATE 74VHC00 QUAD 2-INPUT NAND GATE s HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C s HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) s POWER DOWN P	STMicroelectronics
151	74VHC00	Quad 2-Input NAND Gate 74VHC00 — Quad 2-Input NAND Gate February 2008 74VHC00 Quad 2-Input NAND Gate Features ■ High Speed: tPD = 3.7ns (typ.) at TA = 25°C ■ High noise immunity: VNIH = VNIL = 28% VCC (min.) ■ P	Fairchild Semiconductor
150	74VHC02	QUAD 2-INPUT NOR GATE 74VHC02 QUAD 2-INPUT NOR GATE s HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C s HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) s POWER DOWN PR	STMicroelectronics
149	74VHC02	Quad 2-Input NOR Gate 74VHC02 — Quad 2-Input NOR Gate December 2007 74VHC02 Quad 2-Input NOR Gate Features ■ High Speed: tPD = 3.6ns (Typ.) at VCC = 5V ■ Low power dissipation: ICC = 2µA (Max.) at TA = 25°C ■	Fairchild Semiconductor
148	74VHC02	Quad 2-input NOR gate 74VHC02; 74VHCT02 Quad 2-input NOR gate Rev. 01 — 13 August 2009 Product data sheet 1. General description The 74VHC02; 74VHCT02 are high-speed Si-gate CMOS devices and are pin compatible with Low	NXP
147	74VHC02-Q100	Quad 2-input NOR gate 74VHC02-Q100; 74VHCT02-Q100 Quad 2-input NOR gate Rev. 1 — 15 November 2013 Product data sheet 1. General description The 74VHC02-Q100; 74VHCT02-Q100 are high-speed Si-gate CMOS devices and are	NXP
146	74VHC04	HEX INVERTER 74VHC04 HEX INVERTER s HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C s HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) s POWER DOWN PROTECTION	STMicroelectronics
145	74VHC04	Hex Inverter 74VHC04 — Hex Inverter February 2008 74VHC04 Hex Inverter Features ■ High Speed: tPD = 3.8ns (typ.) at VCC = 5V ■ High noise immunity: VNIH = VNIL = 28% VCC (min.) ■ Power down protection i	Fairchild Semiconductor
144	74VHC05	HEX INVERTER 74VHC05 HEX INVERTER (OPEN DRAIN) s HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C s HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) s POWER DOW	STMicroelectronics
143	74VHC08	QUAD 2-INPUT AND GATE 74VHC08 QUAD 2-INPUT AND GATE s HIGH SPEED: tPD = 4.3 ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C s HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) s POWER DOWN P	STMicroelectronics
142	74VHC08	Quad 2-Input AND Gate 74VHC08 — Quad 2-Input AND Gate December 2007 74VHC08 Quad 2-Input AND Gate Features ■ High Speed: tPD = 4.3ns (Typ.) at TA = 25°C ■ High noise immunity: VNIH = VNIL = 28% VCC (Min.) ■ Pow	Fairchild Semiconductor
141	74VHC08	Quad 2-input AND gate 74VHC08; 74VHCT08 Quad 2-input AND gate Rev. 01 — 30 June 2009 Product data sheet 1. General description The 74VHC08; 74VHCT08 are high-speed Si-gate CMOS devices and are pin compatible with Low-p	NXP

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