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-30V, -4.5A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current h...
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1. Recording Function
Stereo Single-ended input with three Selectors MIC Amplifier (+29dB/+26dB/+23dB/+20dB/+16dB/+12dB/0dB) Digital ALC (Automa...
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x –5.9 A, –30 V. RDS(ON) = m: @ VGS = –10 V RDS(ON) = m: @ VGS = – 4.5 V x Extended VGSS range (–25V) for battery applications x ESD protection ...
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physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a...
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The STP4953A is the Dual P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technolo...
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The SMC4953A is the Dual P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technolo...