3DD5024 Datasheet | Pinout, Features, Price Comparison & PDF

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-

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CASE-RATED BIPOLAR TRANSISTOR 3DD5308DHF FOR LOW FREQUENCY AMPLIFICATION R 3DD5024(P) BVCBO IC VCE(sat) tf MAIN CHARACTERISTICS 1500V 8.0 A 3.0V(m

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3DD5024 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features 、；,，。 High br

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CASE-RATED BIPOLAR TRANSISTOR 3DD5024P FOR LOW FREQUENCY AMPLIFICATION R 3DD5024P MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500V 8.0 A 3.0V(max)

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