2SK259 Datasheet | Specifications & PDF Download

2SK2590 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features • • • • • Low on-resistance High speed switching Low

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Silicon Junction FETs (Small Signal) 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.4 unit: mm 1.6±0.15 0.8±

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PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PH

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2SK2598 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2598 Chopper Regulator, DC−DC Converter and Motor Drive Applications

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2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·Minimum Lot

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2SK2590 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed ·100% avalan

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2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%mi

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www.DataSheet4U.com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0300 Rev.3.00 Aug.26.2004 Features • High power output, High ga

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www.DataSheet4U.com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG =

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2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) www.DataSheet4U.com 2SK2599 Unit: mm : RDS (ON) = 2.9 Ω (typ.) : |Yfs| =

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