| No |
Part Number |
Description |
Manufacture |
PDF |
| 1020 |
2SK1006 |
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric
|
|
| 1019 |
2SK1006-01MR |
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric
|
|
| 1018 |
2SK1007 |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1007
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min)
APPLICATIONS ·Desi |
Inchange Semiconductor
|
|
| 1017 |
2SK1007-01 |
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric
|
|
| 1016 |
2SK1008-01 |
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric
|
|
| 1015 |
2SK1009 |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min)
APPLICATIONS ·high voltage, high speed power switching
|
Inchange Semiconductor
|
|
| 1014 |
2SK1010 |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1010
DESCRIPTION ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min)
APPLICATIONS ·Desig |
Inchange Semiconductor
|
|
| 1013 |
2SK1010-01 |
N-CHANNEL SILICON POWER MOS-FET
|
Fuji Electric
|
|
| 1012 |
2SK1011 |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min)
APPLICATIONS ·high voltage, high speed power switching |
Inchange Semiconductor
|
|
| 1011 |
2SK1011-01 |
N-Channel Silicon Power MOSFET
|
Fuji Electric
|
|
| 1010 |
2SK1012 |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min)
APPLICATIONS ·high voltage, high speed power switching |
Inchange Semiconductor
|
|
| 1009 |
2SK1012-01 |
N-CHANNEL SILICON POWER MOS-FET
|
Fuji Electric
|
|
