2N2907A Datasheet | Specifications & PDF Download

2N2907A Small Signal Switching Transistor PNP Silicon Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS

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2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group acco

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS P2N2907 P2N2907A

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P2N2907A Amplifier Transistor PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage Collector--Base V

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MSR2N2907AUB / UBC Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Radiation Level TID ELDRS QPL RANGE and RAD LE

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2N2907ADIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR PN

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SM

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MSR2N2907A(L) Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC22900 Radiation Level TID ELDRS QPL RANGE and RAD LEVEL MS

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2907A/D Amplifier Transistor PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2907A MA

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MSR2N2907AUB / UBC Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Radiation Level TID ELDRS QPL RANGE and RAD LE

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DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors Product specification Supersedes data of September 1994 File und

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Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Coll

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LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N2907ADCSM DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERA

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LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N2907ACSM HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC S

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2N2907AQ–LCC20 MECHANICAL DATA Dimensions in mm (inches) 5 .0 8 (.2 0 0 ) 1 .2 7 (.0 5 0 ) R E F 1 .2 7 (.0 5 0 ) R E F P IN 1 IN D E X 1 SURFACE MO

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2N2906A, L, UA, UB 2N2907A, L, UA, UB Radiation Hardened PNP Silicon Switching Transistors Features • Qualified to MIL-PRF-19500/291 • Available in JA

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PN2907A / 2N2907A PN2907A / 2N2907A PNP General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz V

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SM

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LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME 2N2907A HIGH SPEED MEDIUM POWER PNP SWITCHIN

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