() CRST052N15N3Z, CRSS049N15N3Z SkyMOS3 N-MOSFET 150V, 4mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance R

176 2N (GERMANIUM) 2N669 CASE 11 (TO-3) PNP germanium power transistors for economical power switching circuits and commercial grade power amplifi

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 100mΩ RDSON (MAX.)@VGS=4.5

DATA SHEET www.onsemi.com MOSFET - Single, N-Channel 100 V, 25 mW, 24 A NTTFD022N10C V(BR)DSS 100 V RDS(ON) MAX 25 mW @ 10 V 61 mW @ 6 V ID MAX 24

LMN22N10DF 100V N-Channel MOSFET LMN22N10DF Rev. 1.0 Features ● 100V,40A, RDS(ON) =24mΩ@VGS = 10V ● Improved dv/dt capability ● Fast switching ● 100

Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N10 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltag

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N12 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-

HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

Features  Enhancement mode  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested,100% Rg Tested VSP012N12MS-G 120V/42

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to

CMD12N10 / CMU12N10 100V N-Channel MOSFET General Description N-channel enhancement mode field-effect power transistor in a plastic envelope suitabl

Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N10L ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage

Elektronische Bauelemente SPR42 10-C 42A, 100V, RDS(O ) 24mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifie

Standard Rectifier Module Phase leg Part number MDD142-12N1 2 13 MDD142-12N1 VRRM I FAV VF = 2x 1200 V = 165 A = 1.05 V Backside: isolated Featur

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N18 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage-