2N1 Datasheet | Specifications & PDF Download

Features  N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  P

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Fast Switching  Very low on-resistance RDS(on) @ VGS=4.5 V  100% Avalanche test  P

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() CRST024N10N3Z,CRSS022N10N3Z SkyMOS3 N-MOSFET 100V, 2mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RD

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UNISONIC TECHNOLOGIES CO., LTD UT2N10 2.0A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power

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IPP082N10NF2S MOSFET StrongIRFETTM 2 Power-Transistor Features • Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch

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2N 1162 thru 1167 2N (GERMANIUM) 2N1162A thru 2Nl167A PNP germanium power transistors for switching and amplifier applications in high reliabilit

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2N 1539 thru 1548 2N (GERMANIUM) 2N1539A thru 2N1542A, 2N1544A thru 2N1547A PNP germanium power transistors for switching and amplifier applicati

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2N 1529 thru 2N 1538 (GERMANIUM) 2N 1529A thru 2N 1532A, 2N 1534A thru 2N 1537A PNP germanium power transistors for switching and amplifier applicatio

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www.DataSheet4U.com

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R5402N101KD PRODUCT SPECIFICATIONS www.DataSheet4U.com R5402N101KD-TR-F contents [1] Outline [2] Block Diagram [3] Pin Descriptions [4] Absolute

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www.DataSheet.co.kr IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate drive

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RCA Transistor 2N1479 Datasheet www.semicon-data.com RCA Transistor 2N1479 Datasheet www.semicon-data.com RCA Transistor 2N1479 Datasheet w

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PD - 97002A Applications l High frequency DC-DC converters l Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce\ Switching Losses l F

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UNISONIC TECHNOLOGIES CO., LTD UT2N15 2.0A, 150V N-CHANNEL POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UT2N15 is a high voltage power MOSFET com

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UNISONIC TECHNOLOGIES CO., LTD UTT2N10-H 2.0A, 100V HEXFET POWER MOSFET POWER MOSFET  DESCRIPTION The UTC UTT2N10-H is an N-channel Power MOSFET, i

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (TYP.)@VGS=10V

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() CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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2N 178 (GERMANIUM) 2N554 2N555 ~ PNP germanium power transistor for non-critical power amplifier and power switching applications re- CASE 11 (TO-

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2N 1131 (SILl.CON) 2N1131JAN AVAILABLE 2Nl131A 2N1991 PNP SILICON ANNULAR TRANSISTORS · .. designed for medium-speed switching and amplifier applicat

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2N1008, A, B(GERMANIUM) 2Nl008B JAN AVAILABLE CASE31(~,1)_~ (TO-5) All ,leads isolated PNP germanium transistor for audio driver and medium speed sw

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