2N1 Datasheet | Pinout, Features, Price Comparison & PDF

176 2N (GERMANIUM) 2N669 CASE 11 (TO-3) PNP germanium power transistors for economical power switching circuits and commercial grade power amplifi

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 100mΩ RDSON (MAX.)@VGS=4.5

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 22N10 ·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltag

HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

DATA SHEET www.onsemi.com MOSFET - Single, N-Channel 100 V, 25 mW, 24 A NTTFD022N10C V(BR)DSS 100 V RDS(ON) MAX 25 mW @ 10 V 61 mW @ 6 V ID MAX 24

Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power fie

() CRST052N15N3Z, CRSS049N15N3Z SkyMOS3 N-MOSFET 150V, 4mΩ, 160A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance R

LMN22N10DF 100V N-Channel MOSFET LMN22N10DF Rev. 1.0 Features ● 100V,40A, RDS(ON) =24mΩ@VGS = 10V ● Improved dv/dt capability ● Fast switching ● 100

HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail

SSCE5V042N1 SSCE5V042N1 Lo BVV Ultra-low Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection  Description  PIN configuration

HM 1% N-Channel Enhancement Mode Power MOSFET Description The HM 1% uses advanced trench technology and design to provide excellent RDS(ON) with

Elektronische Bauelemente SPR42 10-C 42A, 100V, RDS(O ) 24mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifie

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to

SSCE12V22N1 SSCE12V22N1 Lo BVV Low-Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection  Description  PIN configuration The

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N10L ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage

2N1303 2N1305 2N1307 2N1309 GERMANIUM PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1303, 2N1305, 2N1

2N1303 2N1305 2N1307 2N1309 GERMANIUM PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1303, 2N1305, 2N1