W25Q256JW 1.8V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI Publication Release Date: December 08. 2017 - Revision B W25Q256JW Table of Contents 1

8Gb: x16, x32 GDDR5 SGRAM Features GDDR5 SGRAM MT51J256M32 – 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks Features • VDD = VDDQ = 1.5V ±3%

W25R256JV 3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & RPMC Publication Release Date: June 16, 2020 Preliminary - Revision D W25R256JV Table

4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J1G4 – 128 Meg x 4 x 8 banks MT41J512M8 – 64 Meg x 8 x 8 banks MT41J256M16 – 32 Meg x 16 x 8 bank

W25Q256JW 1.8V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI Publication Release Date: September 04, 2018 - Revision D W25Q256JW Table of Contents

Memory Module Specifications KVR800D2N5/2G 2GB 256M x 64-Bit DDR2-800 CL5 240-Pin DIMM DESCRIPTION This document describes ValueRAM’s 256M x 64-bit

4Gb DDR3L – AS4C256M16D3L Revision History AS4C256M16D3L - 96-ball FBGA PACKAGE Revision Rev 1.0 Rev 2.0 Details Preliminary datasheet Added Backw

4Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8

A3V56S30FTP A3V56S40FTP 256M Single Data Rate Synchronous DRAM 256Mb Synchronous DRAM Specification A3V56S30FTP A3V56S40FTP Zentel Electronics Corp.

Micron Confidential and Proprietary Preliminary‡ 200b: x32 Automotive LPDDR4/LPDDR4X SDRAM Features Automotive LPDDR4/LPDDR4X SDRAM MT53E256M32D2 F

W25Q256JV 3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI For Industrial & Industrial Plus Grade Publication Release Date: October 23, 2018 Revisio

ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

DDR3-4Gb E-Die NT5CB(C)512M8EQ/NT5CB(C)256M16ER Commercial and Industrial DDR3(L) 4Gb SDRAM Features  Basis DDR3 Compliant - 8n Prefetch Architect

TC58NVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3HTA00 is a

4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM (TBD)1024M4 – 128 Meg x 4 x 8 Banks (TBD)512M8 – 64 Meg x 8 x 8 Banks (IMD256M16R30HG8GNF-125/107)256M

AS4C256M16D3LA-12BIN Revision History 4Gb AS4C256M16D3LA-12BIN - 96 ball FBGA PACKAGE Revision Details Rev 1.0 Preliminary datasheet Date May. 2016

W25Q256FV 3V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: December 02, 2014 Preliminary - Revision G W25Q256FV Tab

TC58BVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58BVG1S3HTA00 is a

256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This

4Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM (TBD)1024M4 – 128 Meg x 4 x 8 Banks (TBD)512M8 – 64 Meg x 8 x 8 Banks (IMD256M16R30HG8GNF-125/107)256M