1SS Datasheet | Specifications & PDF Download

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Hall-IC MH1SS1

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1SS133 Diodes Switching diode 1SS133 Applications High speed switching External dimensions (Units : mm) CATHODE BAND (YELLOW) φ0.4±0.1 Features 1

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1SS244 Diodes Switching diode 1SS244 Applications High voltage switching General purpose rectification External dimensions (Units : mm) CATHODE BA

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MMBTRC116SS~MMBTRC122SS NPN Digtal Transistor Features  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manu

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www.DataSheet4U.com 1SS131 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max.

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TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application z Low forward voltage z Low reverse current z Smal

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Ordering number :EN4562A 1SS365 Schottky Barrier Diode VHF, UHF Detector and Mixer Applications Features · Small-sized package facilitates high-dens

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Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com

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1SS82 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-149A (Z) Rev. 1 Jul. 1995 Features • High reverse voltage. (VR = 200V) • High

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1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short

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Production specification Surface mount switching diode FEATURES  Low forward voltage VF=0.9V(typ). Pb Lead-free  Small total capacitance.  Fa

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Ordering number :EN3156A 1SS350 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features · Small interterminal capacitanc

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1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-150A (Z) Rev. 1 Jul. 1995 Features • High reverse voltage. (VR = 250V) • High

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LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application Featrues z Low forward voltage : VF (3) = 0.9V (typ.) z Fast reverse recovery time

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NotNeRewcDoemsimgennsded for 1SS356 Band Switching Diodes 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 35 V Ct 1.2 pF rF 0.9 Ω 　 ●F

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package  Low forwa

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