Features Silicon Epitaxial Planar Diode For general purpose and switching Mechanical Data Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g 1N914 S

BL G SMALL SIGNAL SWITCHING DIODE FEATURES ƺ Glass sealed envelope. (MSD) ƺ VRM=100V guaranteed ƺ High reliability MECHANICAL DATA ƺ Case: DO-35, glas

DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1N914 THRU 1N 1N 4148 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE

SURFACE MOUNT SWITCHING DIODE FEATURES  Fast Switching Speed  Surface Mount Package Ideally Suited for Automatic Insertion  For Surface Mounted App

1N914W SURFACE MOUNT FAST SWITCHING DIODE VOLTAGE RANGE: 100V CURRENT: 7 5 m A Features Low Current Leakage Case Material: Molded Plastic. UL Fla

isc N-Channel MOSFET Transistor FQA11N90 FEATURES ·Drain Current : ID= 11.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On

BL G SMALL SIGNAL SWITCHING DIODE FEATURES ƺ Glass sealed envelope. (MSD) ƺ VRM=100V guaranteed ƺ High reliability MECHANICAL DATA ƺ Case: DO-35, glas

• 1N941B, 1N943B, 1N944B AND 1N945B AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/157 • 1N941B-1, 1N943B-1, 1N944B-1 AND 1N945B-1 AVAILABLE IN

1N914, 1N914A, 1N914B Silicon Rectifier Diode Ultra Fast Switch Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Maximum Rep

FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V

1N914W Small Signal Diode . Absolute Maximum Ratings (Ta=25 OC) Parameter Repetitive reverse voltage Average rectified forward current Non-repetitive

DATA SHEET www.onsemi.com MOSFET – N-Channel QFET 900 V, 11.4 A, 960 mW FQA11N90-F109 Description This N−Channel Enhancement Mode Power MOSFET is pr

lN9S7 thru lN992 CASE 51 (00-7) Hermetically sealed, all-glass case with all external surfaces corrosion resistant. Cathode end, indicated by color

Small Signal Diode 1N91x, 1N4x48, FDLL914, FDLL4x48 ORDERING INFORMATION Part Number Marking Package 1N914 914 DO−204AH (DO−35) 1N914−T50A 914

FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ April 2013 Features • 11.4 A,

FQA11N90C 900V N-Channel MOSFET www.DataSheet4U.com September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1

1N941-1N946B High-reliability discrete products and engineering services since 1977 TEMPERATURE COMPENSATED ZENER DIODES FEATURES  Available as “H

® MOTOROLA Designers Data Sheet a lN746 thru lN759 lN957A thru lN986A lN4370 thru lN4372 GLASS ZENER DIODES 500 MILLIWATTS 2.4-110 VOLTS MAXIMUM R

® MOTOROLA Designers Data Sheet a lN746 thru lN759 lN957A thru lN986A lN4370 thru lN4372 GLASS ZENER DIODES 500 MILLIWATTS 2.4-110 VOLTS MAXIMUM R