1N9 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 11N90 ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltag

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Gate Controlled Current Limiter IXCY01N90E IXCP01N90E VDSS = I =D(limit) RDS(on) ≤ 900V 250mA 80Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS

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1N914 & 1N4148-1 Silicon Switching Diode Features  Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116  Metallurgically Bonded  Hermetically

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FQA11N90C 900V N-Channel MOSFET www.DataSheet4U.com September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1

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Gate Controlled Current Limiter IXCY01N90E IXCP01N90E VDSS = I =D(limit) RDS(on) ≤ 900V 250mA 80Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS

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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semicondu

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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 N Discrete POWER & Signal Technologies 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 DO-35 LL-34 THE PLACEMENT

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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 — Small Signal Diode June 2015 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Cathode Band DO-

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1N914,A,B-1N916,A,B High-reliability discrete products and engineering services since 1977 SWITCHING RECTIFIERS FEATURES  Available as “HR” (high

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1N914/A/B FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 100 V • Repetitiv

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www.vishay.com 1N914 Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES • Fast switching speed • High reliability • High conductance

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Small Signal Diode 1N91x, 1N4x48, FDLL914, FDLL4x48 ORDERING INFORMATION Part Number Marking Package 1N914 914 DO−204AH (DO−35) 1N914−T50A 914

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ISW11N90A N-Channel MOSFET Applications: • ATX Power • LCD Panel Power Pb Lead Free Package and Finish VDSS 950V RDS(on)(Typ) ID (Max) 0.85Ÿ 11A

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STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a D2PAK, TO-220FP, TO

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N R N-CHANNEL MOSFET JCS11N90T MAIN CHARACTERISTICS ID VDSS Rdson-max （Vgs=10V） Qg-typ 11 A 900 V 1.10Ω 66nC Package    LED APPLICA

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NOT RECOMMENDED FOR NEW DESIGNS MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth 

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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 N Discrete POWER & Signal Technologies 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 DO-35 LL-34 THE PLACEMENT

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FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low g

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1N4148/1N4448/1N914B Taiwan Semiconductor 150mA, 100V Switching Diode FEATURES ● Fast switching device (trr < 4ns) ● High surge current capability ●

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