Features Silicon Epitaxial Planar Diode For general purpose and switching Mechanical Data Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g 1N914 S

N R N-CHANNEL MOSFET JCS11N90T MAIN CHARACTERISTICS ID VDSS Rdson-max （Vgs=10V） Qg-typ 11 A 900 V 1.10Ω 66nC Package    LED APPLICA

SURFACE MOUNT SWITCHING DIODE FEATURES  Fast Switching Speed  Surface Mount Package Ideally Suited for Automatic Insertion  For Surface Mounted App

1N914W Small Signal Diode . Absolute Maximum Ratings (Ta=25 OC) Parameter Repetitive reverse voltage Average rectified forward current Non-repetitive

BL G SMALL SIGNAL SWITCHING DIODE FEATURES ƺ Glass sealed envelope. (MSD) ƺ VRM=100V guaranteed ƺ High reliability MECHANICAL DATA ƺ Case: DO-35, glas

www.eicsemi.com 1N914W PRV : 100 Volts Io : 200 mA FEATURES : * Fast switching diodes. * Ultra-Small Surface Mount Package * For General Purpose Switc

FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V

isc N-Channel MOSFET Transistor FQA11N90 FEATURES ·Drain Current : ID= 11.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On

DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1N914 THRU 1N 1N 4148 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE

1N914W SURFACE MOUNT FAST SWITCHING DIODE VOLTAGE RANGE: 100V CURRENT: 7 5 m A Features Low Current Leakage Case Material: Molded Plastic. UL Fla

1N957B THRU 1N992B SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 500mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEM

BL G SMALL SIGNAL SWITCHING DIODE FEATURES ƺ Glass sealed envelope. (MSD) ƺ VRM=100V guaranteed ƺ High reliability MECHANICAL DATA ƺ Case: DO-35, glas

• 1N941BUR-1, 1N943UR-1B, 1N944BUR-1 AND 1N945BUR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/157 • TEMPERATURE COMPENSATED ZENER REF

1N914, 1N914A, 1N914B Silicon Rectifier Diode Ultra Fast Switch Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Maximum Rep

FQA11N90C 900V N-Channel MOSFET www.DataSheet4U.com September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1

1N935(A)(B)(UR)-1N935(A)(B)(UR) High-reliability discrete products and engineering services since 1977 TEMPERATURE COMPENSATED ZENER REFERENCE DIODE

1N935(A)(B)(UR)-1N935(A)(B)(UR) High-reliability discrete products and engineering services since 1977 TEMPERATURE COMPENSATED ZENER REFERENCE DIODE

1N935B-1 – 1N938B-1 Available on commercial versions Temperature Compensated Zener Reference Diodes Qualified per MIL-PRF-19500/156 DESCRIPTION The

N R N-CHANNEL MOSFET JCS11N90WT MAIN CHARACTERISTICS Package ID 11 A VDSS 900 V Rdson（@Vgs=10V） 1.10 Ω Qg 66 nC z z z UPS APPLICA

1N941-1 thru 1N945B-1 Available on commercial versions 11.7 Volt Temperature Compensated Zener Reference Diodes Qualified per MIL-PRF-19500/157 DES