1N8 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 11N80 Preliminary 11A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80 is an N-Channel power MOSFET, it uses

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Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate

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UNISONIC TECHNOLOGIES CO., LTD 11N80-C 11A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80-C provide excellent RDS(ON), low gate charge and

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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1N821-1 – 1N829A-1 Available on commercial versions 6.2 & 6.55 Volt Zener Reference Diodes Qualified per MIL-PRF-19500/159 DESCRIPTION The popular

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www.vishay.com SiHB11N80E Vishay Siliconix E Series Power MOSFET D2PAK (TO-263) D G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max

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• 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1 AND 1N829UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 • TEMPERATURE COMPENSATED ZE

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1N8149US – 1N8182US Available Voidless-Hermetically-Sealed Unidirectional 150 W Low-Capacitance Transient Voltage Suppressors DESCRIPTION This seri

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1N821-1N829A High-reliability discrete products and engineering services since 1977 TEMPERATURE COMPENSATED ZENER REFERENCE DIODE FEATURES  Availa

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• 1N821-1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 • TEMPERATURE COMPENSATED ZENER REFERENC

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1N821-1 – 1N829A-1 Available on commercial versions 6.2 & 6.55 Volt Zener Reference Diodes Qualified per MIL-PRF-19500/159 DESCRIPTION The popular

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1N821-1 – 1N829A-1 Available on commercial versions 6.2 & 6.55 Volt Zener Reference Diodes Qualified per MIL-PRF-19500/159 DESCRIPTION The popular

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L(4R) Plastic-Encapsulate MOSFETS CJU01N80 N-Channel Power MOSFET V(BR)DSS 800V RDS(on)M

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Electronic Alliance www.eaa.net.au MZ31 Series for time delay start for lighting MZ31 series of PTC Thermistor are applicable to various types of fluo

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1N8034-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Electric

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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www.DataSheet4U.com High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 RDS(on) = 800 V = 100mA = 50 Ω Preliminary da

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• 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1 AND 1N829UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/159 • TEMPERATURE COMPENSATED ZE

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N

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