1N6 Datasheet | Pinout, Features, Price Comparison & PDF

FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

MDF11N60 N-channel MOSFET 600V MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDF11N60 uses advanced Magnachip’s MOSFET Technolo

1N60-1N60P SMALL SIGNAL SCHOTTKY DIODES Features Fast switching for high efficiency Low reverse leakage High forward surge current capability

QA3111N6N 30V Asymmetric Dual N-Channel Power MOSFET General Description The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET

Silicon Schottky Barrier Diode FEATURES • Metal silicon junction, majority carrier conduction • Ideal for used in detection or for switching on the ra

1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junctio

1N60PW-1N60SW SCHOTTKY BARRIER DIODE Features High reliability Low forward voltage and reverse current Mechanical Data Case: SOD-123FL plastic

■Silicon Schottky Barrier Diode ■ Features ● Metal silicon junction, majority carrier conduction ● Ideal for used in detection or for switching on the

HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termi

WML11N65C2, WMK11N65C2, WMM11N65C2 WMN11N65C2, WMP11N65C2, WMO11N65C2 650V 0.47Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 Available on commercial versions Schottky Barrier Diode Qualified per MIL-PRF-19500/

SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 a

tSENSITRON SEMICONDUCTOR AXIAL LEAD / MELF, TRANSIENT VOLTAGE SUPPRESSOR BI- DIRECTIONAL DIODES Peak Pulse Power 500 W Unidirectional Chip 1C6102 -

1N5985-1N6031 High-reliability discrete products and engineering services since 1977 500mW ZENER DIODES FEATURES  Available as “HR” (high reliabil

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5102, REV. B.3 1N6324/US thru 1N6351/US StandZaErNd ER 500mW VOLTAGE REGULATOR AVAILABLE AS 1N, JAN

1N60-DO35 / 1N60P-DO35 30-50mA Leaded Type Small Signal Diodes ■Features • Low current rectification and high speed switching. • Silicon epitaxial pla

1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum

1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum