1N6 Datasheet | Specifications & PDF Download

Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

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STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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●General Description The SJ MOSFET HMS11N65 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device of

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• AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED 1N645-1 MAXIMUM RATINGS Operating Temperatu

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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1N6461 – 1N6468 Available on commercial versions Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors Qualified per MIL-PRF-195

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1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junctio

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www.DataSheet4U.com AP01N60P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating

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1N6267 1N6303A / 1.5KE6V8 1.5KE440A 1N6267C 1N6303CA / 1.5KE6V8C 1.5KE520C 1500 W Unidirectional and Bidirectional Transient Vo

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1.5KE Series and 1N6267 thru 1N6303A Vishay Semiconductors formerly General Semiconductor TRANSZORB® Transient Voltage Suppressors Case Style 1.5KE

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FCPF11N60F — N-Channel SuperFET® FRFET® MOSFET FCPF11N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ November 2013 Features • 600 V @ TJ

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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HMS1N65S N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provid

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1N645-1N649 High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIERS FEATURES  Available as “HR” (high

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1N645-1N649 High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIERS FEATURES  Available as “HR” (high

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1N645-1 FEATURES • 1N645-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED • HERMETICALLY SEAL

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FEATURES 1N645UR-1 • 1N645UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE

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