| No |
Part Number |
Description |
Manufacture |
PDF |
| 3819 |
1N60 |
Schottky Barrier Rectifier
MCC
omponents 20736 Marilla Street Chatsworth
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Features
• High Reliability • Low Reverse Current and Low Forward Voltage
|
MCC
|
|
| 3818 |
1N60 |
Shottky Barrier Diode
Wuxi Xuyang Electronics Co Ltd
FEATURES
1. High reliability 2. Low reverse current and low forward voltage
APPLICATIONS
Low current certification and high speed switching.
1N60-1N60P Shottky Barrier |
VOLTTS
|
|
| 3817 |
1N60 |
Schottky Barrier Diode
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon e |
Excel Semiconductor
|
|
| 3816 |
1N60 |
SMALLE SIGNAL SCHOTTKY RECTIFIERS
1N60
THRU
1N60P
SMALLE SIGNAL SCHOTTKY RECTIFIERS
Metal-on-silicon junction,majority camier conduction High currentcapability,low forward voltage drop • Ultra speed switching characteristics Ext |
DACO
|
|
| 3815 |
1N60 |
SMALL SIGNAL SCHOTTKY DIODE
1N60 THRU 1N60P
SMALL SIGNAL SCHOTTKY DIODE
Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere
FEATURES
● Metal-on-silicon junction, majority carrier conduction ● High current |
KD
|
|
| 3814 |
1N60 |
Schottky Barrier Diodes
Schottky Barrier Diodes
P b Lead(Pb)-Free
Features: * High Reliability * Low Reverse Current and Low Forward Voltage
Applications: * Low Current Rectification and High Speed Switching
Mechanical Data: |
WEITRON
|
|
| 3813 |
1N60 |
SMALL SIGNAL SCHOTTKY DIODES
R SEMICONDUCTOR
1N60, 1N60P
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Metal-on-silicon junction, majority carrier conduction High current capability, Low forward voltage drop Extremely low reverse curre |
JINAN JINGHENG
|
|
| 3812 |
1N60 |
GERMANIUM DIODES
1N60, 1N60P
Features
· Metal silicon junction, majority carrier conduction · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteri |
DEC
|
|
| 3811 |
1N60 |
Germanium Glass Diode
Germanium Glass Diode
Features
• Germanium Glass Diode • RoHS Compliance
Germanium Glass Diode 1N60/1N60P
DO-7
Mechanical Data
Case: Terminals:
Polarity: Weight:
DO-7, molded glass Plated axia |
TAITRON
|
|
| 3810 |
1N60 |
Small Signal Schottky Barrier Diode
CENPAK ELECTRONICS
1N60 / 1N60P
Small Signal Schottky Barrier Diode
Features 1. High reliability 2. Low reverse current and low forward voltage 3. High temperature soldering guaranteed
250 OC/10 sec |
CENPAK
|
|
| 3809 |
1N60 |
Schottky Barrier Diode
FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silic |
Formosa MS
|
|
| 3808 |
1N60 |
N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 1N60
1.2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, |
UTC
|
|
