FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

MDF11N60 N-channel MOSFET 600V MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDF11N60 uses advanced Magnachip’s MOSFET Technolo

QA3111N6N 30V Asymmetric Dual N-Channel Power MOSFET General Description The QA3111N6N is a high performance trench Dual N-channel asymmetric MOSFET

1N60-1N60P SMALL SIGNAL SCHOTTKY DIODES Features Fast switching for high efficiency Low reverse leakage High forward surge current capability

Silicon Schottky Barrier Diode FEATURES • Metal silicon junction, majority carrier conduction • Ideal for used in detection or for switching on the ra

1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junctio

SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av

1N60PW-1N60SW SCHOTTKY BARRIER DIODE Features High reliability Low forward voltage and reverse current Mechanical Data Case: SOD-123FL plastic

1N60-1N60P SMALL SIGNAL SCHOTTKY DIODES Features Fast switching for high efficiency Low reverse leakage High forward surge current capability

1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 Available on commercial versions Schottky Barrier Diode Qualified per MIL-PRF-19500/

BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE 1N6263 VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW FEATURES For general purpose applications Metal

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 a

® 1N6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switch

■Silicon Schottky Barrier Diode ■ Features ● Metal silicon junction, majority carrier conduction ● Ideal for used in detection or for switching on the

1N60-DO35 / 1N60P-DO35 30-50mA Leaded Type Small Signal Diodes ■Features • Low current rectification and high speed switching. • Silicon epitaxial pla

HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termi

1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity wh

FQD1N60 FQU1N60 FQI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The FQD1N60 & FQU1N60 & FQI1N60 have been fabricated using a

WML11N65C2, WMK11N65C2, WMM11N65C2 WMN11N65C2, WMP11N65C2, WMO11N65C2 650V 0.47Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen