1N2 Datasheet | Pinout, Features, Price Comparison & PDF

FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET 250 V, 51 A, 60 mΩ Features • RDS(on) = 48 mΩ(Typ.) @

SAT01N24AMA LIN bus TVS Protection Features Applications ● Transient protection for high-speed data lines IEC 61000-4-2 (ESD) ±30kV (Air) ±30kV (Co

FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET 250 V, 51 A, 60 mΩ Features • RDS(on) = 48 mΩ (Typ.)

Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

SILICON CONTENT TECHNOLOGY SP1N28 3.8V-36V Vin, 5A, High Efficiency Synchronous Step-down DCDC Converter with Programmable Frequency FEATURES • Wid

GOFORD G01N20LE N-Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(

GOFORD G01N20LE N-Channel Enhancement Mode Power MOSFET Description This Product uses advanced trench technology MOSFETs to provide excellent RDS(

Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com Free Datashe

PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) ma

FDP61N20 — N-Channel UniFETTM MOSFET FDP61N20 N-Channel UniFETTM MOSFET 200 V, 61 A, 41 mΩ Features • RDS(on) = 34 mΩ (Typ.) @ VGS = 10 V, ID = 30.5

isc N-Channel MOSFET Transistor IRFB31N20D，IIRFB31N20D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤82mΩ ·Enhancement mode ·Fast Switching

MOSFET – N-Channel, UNIFETE 250 V, 51 A, 60 mW FDP51N25, FDPF51N25 Description UniFET MOSFET is onsemi’s high voltage MOSFET family based on planar st

www.DataSheet4U.com PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters

ＲＴ１Ｎ２３７Ｘ SERIES 〈Transistor〉 Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N237X is a one chip transi

Elektronische Bauelemente SSQF11N20-C 11A, 200V, RDS(ON) 180mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies

1N277 AXIAL LEADED GOLG BONDED DIODES Features Lower leakage current Flat junction capacitance High mechanical strength At least 1 million ho

PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) ma

PD- 93805B SMPS MOSFET IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 200V RDS(on) ma

PD - 94946 SMPS MOSFET Applications l High Frequency DC-DC converters l Lead-Free VDSS 200V IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF HEXFET® Pow