Datasheet4U Logo Datasheet4U.com

FDD4141 - P-Channel PowerTrench MOSFET

General Description

This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.

Key Features

  • Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A.
  • Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A.
  • High performance trench technology for extremely low rDS(on).
  • RoHS Compliant tm General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDD4141 P-Channel MOSFET ON Semiconductor
FDD4141 P-Channel MOSFET VBsemi
FDD4141-F085BK -40V -50A P-Channel MOSFET ON Semiconductor
FDD4243 P-Channel MOSFET ON Semiconductor
FDD4243-F085 P-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDD4141-F085 P-Channel PowerTrench MOSFET
FDD4243 P-Channel MOSFET
FDD4243_F085 P-Channel PowerTrench MOSFET
FDD45AN06LA0 N-Channel PowerTrench MOSFET
FDD4685 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FDD4141 P-Channel PowerTrench® MOSFET July 2007 FDD4141 P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ Features „ Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A „ Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant tm General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.