RF3396 Datasheet | RF Micro Devices

Features - DC to >6000MHz Operation - Internally Matched Input and Output - 22d B Small Signal Gain - +2.0d B Noise Figure - +11.5d Bm Output P1d B - Footprint patible with Micro X GND GND GND 12 11 10 NC 1 9 NC RF IN 2 8 RF OUT NC 3 7 NC GND GND GND Applications - Basestation Applications - Broadband, Low-Noise Gain Blocks - IF or RF Buffer Amplifiers - Driver Stage for Power Amplifiers - Final PA for Low-Power Applications - High Reliability Applications Functional Block Diagram Product Description The RF3396 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data munication products operating in frequency bands up to 6000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DCbiasing...