Datasheet Details
| Part number | FDD2670 |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 95.40 KB |
| Description | 200V N-Channel PowerTrench MOSFET |
| Datasheet |
 FDD2670 Datasheet
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General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
Key Features
- 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V.
- Low gate charge.
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current.
- Continuous.
- Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ±20 (Note 1) Units V V A W 3.6.