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FGB20N60SFD-F085 - IGBT

General Description

Using novel field-stop IGBT technology, ON Semiconductor’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.

Key Features

  • High current capability.
  • Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A.
  • High input impedance.
  • Fast switching.
  • Qualified to Automotive Requirements of AEC-Q101.
  • RoHS complaint.

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Full PDF Text Transcription (Reference)

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FGB20N60SFD-F085 600V, 20A Field Stop IGBT FGB20N60SFD-F085 600V, 20A Field Stop IGBT Features • High current capability • Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A • High input impedance • Fast switching • Qualified to Automotive Requirements of AEC-Q101 • RoHS complaint Applications • Inverters, SMPS, PFC, UPS • Automotive Chargers, Converters, High Voltage Auxiliaries C General Description Using novel field-stop IGBT technology, ON Semiconductor’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.