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FQP50N06L - N-Channel MOSFET

General Description

Drain Current ID=50A@ TC=25℃ Drain Source Voltage- : VDSS=60V(Min) Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed swit

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ function ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±25 V Drain Current-continuous@ TC=25℃ 50 ID A Drain Current-continuous@ TC=100℃ 35.4 PD Power Dissipation @TC=25℃ 120 W Tj Max.