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PED645N - N-Channel Enhancement Mode Power MOSFET

Description

The PED645N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

Features

  • VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram G2 S2 S2 G1 S1 S1 DFN2x3-6L bottom view.

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Datasheet preview – PED645N

Datasheet Details

Part number PED645N
Manufacturer semi one
File Size 444.11 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED645N Datasheet
Additional preview pages of the PED645N datasheet.

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Full PDF Text Transcription

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PED645N N-Channel Enhancement Mode Power MOSFET Description The PED645N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.
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